Temperature impact (up to 200 °c) on performance and reliability of HfO2-based RRAMs

2013 5th IEEE International Memory Workshop, IMW 2013

Volumn , Issue , 2013, Pages 116-119

  Cabout, T ^a   Perniola, L ^a   Jousseaume, V ^a   Grampeix, H ^a   Nodin, J F ^a   Toffoli, A ^a   Guillermet, M ^a   Jalaguier, E ^a   Vianello, E ^a   Molas, G ^a   Reimbold, G ^a   De Salvo, B ^a   Diokh, T ^b   Candelier, P ^b   Pirrotta, O ^c   Padovani, A ^c   Larcher, L ^c   Bocquet, M ^d   Muller, C ^d  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^d AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

bipolar operation; data retention; disturb; endurance; Resistive switching random access memory (RRAM)

Indexed keywords

65-NM TECHNOLOGIES; BIPOLAR OPERATION; DATA RETENTION; DISTURB; ELECTRICAL BEHAVIORS; INITIAL PROGRAMMING; PERFORMANCE AND RELIABILITIES; RANDOM ACCESS MEMORY;

C (PROGRAMMING LANGUAGE); DURABILITY; HAFNIUM OXIDES;

RANDOM ACCESS STORAGE;

EID: 84883659748     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2013.6582112     Document Type: Conference Paper

References (11)

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7. D. Ielmini et al., "Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories., " Nanotechnology, vol. 22, no. 25, Jun. 2011.
8. B. Traore et al. "Investigation of the role of electrodes on the retention performances of HfOx based RRAM cells by experiments, atomistic simulation and device physical modeling, " 2013 IEEE IRPS.
9. D. Ielmini et al., "universal Reset Characteristics of unipolar and Bipolar Metal-Oxide RRAM, " Electron Devices, IEEE Transactions on vol. 58, no. 10, pp. 3246-3253, Oct. 2011
10. L. Larcher et al., "Microscopic understanding and modeling of fO2 RRAM device physics", IEEE IEDM Tech. Deg. p 474, 2012
11. T. Diokh et al. "Investigation of the Impact of the Oxide Thickness and RESET condition son Disturb in HfO2-RRAM integrated in a 65nm CMOS Technology" 2013 IEEE IRPS