Selective homoepitaxial growth and luminescent properties of ZnO nanopillars

Nanotechnology

Volumn 22, Issue 18, 2011, Pages

  Khranovskyy, V ^a   Tsiaoussis, I ^b   Hultman, L ^a   Yakimova, R ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

1D STRUCTURES; A-DENSITY; BUILDING BLOCKES; CRYSTALLOGRAPHIC ANISOTROPY; DEFECT EMISSION; EPITAXIAL RELATIONSHIPS; FREE SI; GROWTH EVOLUTION; HIGH SPATIAL DENSITY; HIGH-RESOLUTION TRANSMISSION MICROSCOPIES; HOMOEPITAXIAL GROWTH; LUMINESCENT PROPERTY; METALORGANIC CHEMICAL VAPOR DEPOSITION; MODERATE TEMPERATURE; NANO SCALE; NANOPILLAR; NANOPILLARS; PL PROPERTY; POTENTIAL APPLICATIONS; ROOM TEMPERATURE; SEEDING LAYERS; SINGLE-CRYSTALLINE; UV EMISSIONS; ZNO;

ATMOSPHERIC PRESSURE; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SINGLE CRYSTALS; STOICHIOMETRY;

ZINC OXIDE;

LUMINESCENT AGENT; NANOMATERIAL; ZINC OXIDE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; LUMINESCENCE; METHODOLOGY; NANOTECHNOLOGY; ULTRASTRUCTURE;

CRYSTALLIZATION; LUMINESCENCE; LUMINESCENT AGENTS; NANOSTRUCTURES; NANOTECHNOLOGY; ZINC OXIDE;

EID: 79953269826     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/18/185603     Document Type: Article

References (44)

1. Wang Z L 2009 Mater. Sci. Eng. R 64 33-71
2. Djuriic A B, Ng A M C and Chen X Y 2010 Prog. Quantum Electron. 34 191-259
3. Djurisic A B, Choy W C H, Roy V A L, Leung Y H, Kwong C Y, Cheah K W, Gundu Rao T K, Chan W K, Lui H F and Surya C 2004 Adv. Funct. Mater. 14 856
4. Gao H, Yan F, Li J, Zeng Y and Wang J 2007 J. Phys. D: Appl. Phys. 40 3654
5. Kim D C, Han W S, Kong B H, Cho H K and Hong C H 2007 Physica B 401/402 386-90
6. Liao L, Lu H B, Shuai M, Li J C, Liu Y L, Liu C, Shen Z X and Yu T 2008 Nanotechnology 19 175501
7. Xu S, Qin Y, Xu C, Wei Y, Yang R and Wang Z L 2010 Nat. Nanotechnol. 5 366-73
8. Karpyna V A, Evtukh A A, Semenenko M O, Lazorenko V I, Lashkarev G V, Khranovskyy V D and Yakimova R 2009 J. Microelectron. 40 229-31
9. Evtukh A A, Litovchenko V G, Semenenko M O, Karpyna V A, Lashkarev G V, Lazorenko V I, Khranovskyy V D, Kopylova L I, Okun I Y and Piryatynskyy Y P 2007 Superlatt. Microstruct. 42 451-60
10. Kumar R T R, McGlynn E, McLoughlin C, Chakrabarti S, Smith R C, Carey J D, Mosnier J P and Henry M O 2007 Nanotechnology 18 215704
11. Khranovskyy V, Tsiaoussis I, Larsson L A, Holtz P O and Yakimova R 2009 Physica B 404 4359-63
12. Huang M H, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R and Yang P 2001 Science 292 1897
13. Behrends A, Bakin A and Waag A 2009 J. Microelectron. 40 280-2
14. Wang R C, Liu C P, Huang J L and Chen S J 2005 Appl. Phys. Lett. 86 251104
15. Khranovskyy V, Tsiaoussis I, Yazdi G R, Hultman L and Yakimova R 2010 J. Cryst. Growth 312 327-32
16. Miao L, Ieda Y, Tanemura S, Cao Y G, Tanemura M, Hayashi Y, Toh S and Kaneko K 2007 Sci. Technol. Adv. Mater. 8 443-7
17. Nishimura R, Sakano T, Okato T, Saiki T and Obara M 2008 Japan. J. Appl. Phys. 47 4799-802
18. Kim Y J, Lee C H, Hong Y J, Yi G C, Kim S S and Cheong H 2006 Appl. Phys. Lett. 89 163128
19. Postels B, Wehmann H-H, Bakin A, Kreyer M, Fuhrmann D, Blaesing J, Hangleiter A, Krost A and Waag A 2007 Nanotechnology 18 195602
20. Izaki M, Shinagawa T and Takahashi H 2006 J. Phys. D: Appl. Phys. 39 1481-4
21. Gao P X and Wang Z L 2004 J. Phys. Chem. B 108 7534
22. Han X, Wang G, Zhouc L and Hou J G 2006 Chem. Commun. 212-4
23. Han X H, Wang G Z, Wang Q T, Cao L, Liu R B, Zou B S and Hou J G 2005 Appl. Phys. Lett. 86 223106
24. Wang H, Zhang Z P, Wang X N, Mo Q, Wang Y, Zhu J H, Wang H B, Yang F J and Jiang Y 2008 Nanoscale Res. Lett. 3 309-14
25. Conley J J F, Stecker L and Ono Y 2005 Appl. Phys. Lett. 87 223114
26. www.znordic.com
27. Khranovskyy V, Ulyashin A, Lashkarev G, Svensson B G and Yakimova R 2008 Thin Solid Films 516 1396-400
28. Meyer B L 2004 Phys. Status Solidi b 241 231-60
29. Zhou J, Liu J, Wang X, Song J, Tummala R, Xu N S and Wang Z L 2007 Small 3 622-6
30. Ohring M 1992 The Materials Science of Thin Films 1st edn (London: Academic) p42
31. Liu X, Wu X, Cao H and Chang R P H 2004 J. Appl. Phys. 95 3141
32. Fujimura N, Nishihara T, Goto S, Xu J and Ito T 1993 J. Cryst. Growth 130 269-79
33. Kong B H and Cho H K 2006 J. Cryst. Growth 289 370-5
34. Ge M Y, Wu H P, Niu L, Liu J F, Chen S J, Shen P Y, Zeng Y W, Wang Y W, Zhang G Q and Jiang J Z 2007 J. Cryst. Growth 305 162-6
35. Li S, Zhang X, Yan B and Yu T 2009 Nanotechnology 20 495604
36. Khranovskyy V, Minikayev R, Trushkin S, Lashkarev G, Lazorenko V, Grossner U, Paszkowicz W, Suchocki A, Svensson B G and Yakimova R 2007 J. Cryst. Growth 308 93-8
37. Khranovskyy V, Grossner U, Lazorenko V, Lashkarev G, Svensson B G and Yakimova R 2007 Superlatt. Microstruct. 39 275-81
38. Studenikin S A, Cocivera M, Kellner W and Pascher H 2000 J. Lumin. 91 223-32
39. Djurisic A B and Leung H J 2006 Small 2 944-61
40. Willander M et al 2009 Nanotechnology 20 332001
41. Zhao Q X, Yang L L, Willander M, Sernelius B E and Holtz P O 2008 J. Appl. Phys. 104 073526
42. Goldberger J, Sirbuly D J, Law M and Yang P 2005 J. Phys. Chem. B 109 9-14
43. Guziewicz E et al 2010 Phys. Status Solidi b 247 1611-5
44. Gupta B K, Haratanath D, Chavla S, Chander H, Singh V N and Shanker V 2010 Nanotechnology 21 225709