Hexagonal boron nitride assisted growth of stoichiometric Al2O3 dielectric on graphene for triboelectric nanogenerators

Nano Energy

Volumn 12, Issue , 2015, Pages 556-566

  Han, Sang A ^a   Lee, Kang Hyuck ^b   Kim, Tae Ho ^b   Seung, Wanchul ^b   Lee, Seok Kyeong ^a   Choi, Sungho ^b   Kumar, Brijesh ^c   Bhatia, Ravi ^a   Shin, Hyeon Jin ^d   Lee, Woo Jin ^d   Kim, SeongMin ^d   Kimq, Hyoung Sub ^b   Choi, Jae Yong ^d   Kim, Sang Woo ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Atomic layer deposition; Dielectric Al2O3; Graphene; Hexagonal boron nitride nanosheets; Triboelectric nanogenerator

Indexed keywords

ATOMIC LAYER DEPOSITION; BORON NITRIDE; BUFFER LAYERS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC ENERGY STORAGE; ELECTRIC POWER GENERATION; GRAPHENE; NANOSHEETS; NANOTECHNOLOGY; NITRIDES; TRIBOELECTRICITY;

ELECTRIC POWER OUTPUT; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); HIGH CHARGES; HIGH-K DIELECTRIC MATERIALS; MECHANICAL FRICTION; NANOGENERATOR; NANOGENERATORS;

ALUMINUM;

EID: 84922309509     PISSN: 22112855     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nanoen.2015.01.030     Document Type: Article

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