Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride

Nature Photonics

Volumn 3, Issue 10, 2009, Pages 591-594

  Watanabe, Kenji ^a   Taniguchi, Takashi ^a   Niiyama, Takahiro ^b   Miya, Kenta ^b   Taniguchi, Masateru ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Futaba Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIOTECHNOLOGICAL APPLICATIONS; CHEMICAL SUBSTANCE; EXCITATION SOURCES; FLUORESCENT MATERIALS; HAND HELD DEVICE; HEXAGONAL BORON NITRIDE; LUMINOUS PROPERTIES; WAVELENGTH REGIONS;

CHEMICAL MODIFICATION; ULTRAVIOLET DEVICES;

BORON NITRIDE;

EID: 70349816484     PISSN: 17494885     EISSN: 17494893     Source Type: Journal    
DOI: 10.1038/nphoton.2009.167     Document Type: Article

References (15)

1. Hecht, J. Materials are a tough challenge for ultraviolet diode lasers. Laser Focus World 44, 67-71 (2008).
2. Khan, A., Balakrishnan, K. & Katona, T. Ultraviolet light-emitting diodes based on group three nitrides. Nature Photon. 2, 77-84 (2008).
3. Watanabe, K., Taniguchi, T. & Kanda, H. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal. Nature Mater. 3, 404-409 (2004).
4. Spindt, C. A., Brodie, I., Humphrey, L. &Westerberg, E. R. Physical properties of thin-film field-emission cathodes with molybdenum cones. J. Appl. Phys. 47, 5248-5263 (1976).
5. Nakamura, S. et al. InGaN-based multi-quantum-well-structure laser diodes. Jpn J. Appl. Phys. 35, L74-L76 (1996).
6. Nakamura, S. et al. InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate. Appl. Phys. Lett. 72, 211-213 (1998).
7. Itoh, S. et al. Development of field-emission displays. J. Soc. Inf. Display 15, 1057-1064 (2007).
8. Watanabe, K., Taniguchi, T., Kuroda, T. & Kanda, H. Effects of deformation on band-edge luminescence of hexagonal boron nitride single crystals. Appl. Phys. Lett. 89, 141902 (2006).
9. Watanabe, K., Taniguchi, T., Kuroda, T. & Kanda, H. Band-edge luminescence of deformed hexagonal boron nitride single crystals. Diam. Relat. Mater. 15, 1891-1893 (2006).
10. Watanabe, K., Taniguchi, T. & Kanda, H. Ultraviolet luminescence spectra of boron nitride single crystals grown under high pressure and high temperature. Phys. Status Solidi A 201, 2561-2565 (2004).
11. Jaffrennou, P. et al. Origin of the excitonic recombinations in hexagonal boron nitride by spatially resolved cathodoluminescence spectroscopy. J. Appl. Phys. 102, 116102 (2007).
12. Museur, L. & Kanaev, A. Near band-gap photoluminescence properties of hexagonal boron nitride. J. Appl. Phys. 103, 103520 (2008).
13. Museur, L., Feldbach, E. & Kanaev, A. Defect-related photoluminescence of hexagonal boron nitride. Phys. Rev. B 78, 155204 (2008).
14. Watanabe, K. & Taniguchi, T. Jahn-Teller effect on exciton states in hexagonal boron nitride single crystal. Phys. Rev. B 79, 193104 (2009).
15. Taniguchi, T. & Watanabe, K. Synthesis of high-purity boron nitride single cyrstals under high pressure by using Ba-BN solvent. J. Crys. Growth 303, 525-529 (2007). (Pubitemid 46617564)