Demonstration of radio-frequency response of amorphous IGZO thin film transistors on the glass substrate

Solid-State Electronics

Volumn 104, Issue , 2015, Pages 122-125

  Su, Liang Yu ^a   Huang, Jianjang ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Amorphous; InGaZnO; Radio frequency; Thin film transistors

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; AMORPHOUS SEMICONDUCTORS; AMPLIFICATION; CUTOFF FREQUENCY; FREQUENCY RESPONSE; GALLIUM ALLOYS; GATE DIELECTRICS; GLASS; HIGH ELECTRON MOBILITY TRANSISTORS; RADIO FREQUENCY IDENTIFICATION (RFID); RADIO WAVES; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; THIN FILM CIRCUITS; THIN FILMS;

AMORPHOUS INDIUM GALLIUM ZINC OXIDES (A IGZO); CURRENT GAIN CUTOFF FREQUENCY; INGAZNO; MAXIMUM FREQUENCY OF OSCILLATIONS; METAL OXIDE THIN-FILM TRANSISTORS; RADIO FREQUENCIES; RADIO-FREQUENCY RESPONSE; RADIO-FREQUENCY-IDENTIFICATION TAGS (RFID);

THIN FILM TRANSISTORS;

EID: 84920660900     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2014.10.007     Document Type: Article

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