Microwave performance of ZnO/ZnMgO heterostructure field effect transistors

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 2, 2011, Pages 449-452

  Sasa, Shigehiko ^a   Maitani, Takeshi ^a   Furuya, Yuto ^a   Amano, Takeshi ^a   Koike, Kazuto ^a   Yano, Mitsuaki ^a   Inoue, Masataka ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

HFETs; MBE; microwave performance; ZnO

Indexed keywords

CHANNEL LAYERS; CURRENT GAIN CUTOFF FREQUENCY; ELECTRON VELOCITY; GATE DEVICES; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; HETEROSTRUCTURES; HFETS; HIGH FREQUENCY PERFORMANCE; MBE; MICROWAVE CHARACTERISTICS; MICROWAVE PERFORMANCE; POWER GAIN CUTOFF FREQUENCIES; POWER GAINS; SAPPHIRE SUBSTRATES; SINGLE-CRYSTALLINE; SMALL SIGNAL; TERMINAL MEASUREMENTS; ZNO; ZNO/ZNMGO;

CUTOFF FREQUENCY; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; STRUCTURAL DESIGN; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

EID: 79751477665     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201000509     Document Type: Article

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