Role of HfO2/SiO2 gate dielectric on the reduction of low-frequent noise and the enhancement of a-IGZO TFT electrical performance

IEEE/OSA Journal of Display Technology

Volumn 8, Issue 12, 2012, Pages 695-698

  Su, Liang Yu ^a   Lin, Huang Kai ^a   Hung, Chia Chin ^a   Huang, Jianjang ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Amorphous InGaZnO; low frequency noise (LFN); subthreshold swing; thin film transistors (TFTs)

Indexed keywords

AMORPHOUS INGAZNO; BI-LAYER; CONDUCTION BAND OFFSET; ELECTRICAL PERFORMANCE; GLASS SUBSTRATES; HIGH PERMITTIVITY; INDIUM GALLIUM ZINC OXIDES; INTERFACE TRAP DENSITY; LOW-FREQUENCY NOISE; LOW-FREQUENCY NOISE MEASUREMENTS; METAL-OXIDE; ON-OFF RATIO; OPERATING VOLTAGE; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS);

AMORPHOUS SEMICONDUCTORS; GATE DIELECTRICS; SUBSTRATES; THIN FILM TRANSISTORS;

HAFNIUM OXIDES;

EID: 84870556958     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2012.2217728     Document Type: Article

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