Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmax of 120 GHz

IEEE Electron Device Letters

Volumn 27, Issue 7, 2006, Pages 570-572

  Ueda, K ^a   Kasu, M ^a   Yamauchi, Y ^a   Makimoto, T ^a   Schwitters, M ^b   Twitchen, D J ^b   Scarsbrook, G A ^b   Coe, S E ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b ELEMENT SIX LTD   (United Kingdom)

Author keywords

Field effect transistor (FET); Hydrogen terminated; Polycrystalline diamond; RF performance

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DEVICE MANUFACTURE; SINGLE CRYSTALS; TRANSCONDUCTANCE;

DIAMOND FIELD EFFECT TRANSISTORS; GATE-SOURCE VOLTAGE; HYDROGEN TERMINATED; POLYCRYSTALLINE DIAMOND;

SEMICONDUCTING DIAMONDS;

EID: 33745639250     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.876325     Document Type: Article

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