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Volumn 626, Issue , 2015, Pages 415-420

Highly transparent and conductive Al-doped ZnO films synthesized by pulsed laser co-ablation of Zn and Al targets assisted by oxygen plasma

(9) You, Qinghu a Cai, Hua a,b Gao, Kun b Hu, Zhigao c Guo, Shuang c Liang, Peipei a Sun, Jian a Xu, Ning a Wu, Jiada a

a FUDAN UNIVERSITY (China)

b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

c EAST CHINA NORMAL UNIVERSITY (China)

Author keywords

Al doped ZnO; Co ablation deposition; Electrical properties; In situ doping; Optical properties; Thin films

Indexed keywords

ABLATION; ANNEALING; BLUE SHIFT; CARRIER CONCENTRATION; CRYSTAL STRUCTURE; DEPOSITION; ELECTRIC PROPERTIES; ENERGY GAP; FILM PREPARATION; II-VI SEMICONDUCTORS; METALLIC FILMS; MORPHOLOGY; OPTICAL PROPERTIES; OXIDE MINERALS; OXYGEN; PULSED LASERS; SEMICONDUCTOR DOPING; THIN FILMS; ZINC; ZINC OXIDE; ZINC SULFIDE;

AL-DOPED ZNO; ANNEALING TREATMENTS; DOPANT CONCENTRATIONS; ELECTRICALLY CONDUCTIVE; FREE CARRIER CONCENTRATION; HEXAGONAL WURTZITE STRUCTURE; IN-SITU DOPING; OPTICAL AND ELECTRICAL PROPERTIES;

OPTICAL FILMS;

EID: 84920280981 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2014.11.153 Document Type: Article

Times cited : (49)

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