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Volumn 258, Issue 22, 2012, Pages 8595-8598
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Microstructure, optical and electrical properties of Al-doped ZnO films grown by MOCVD
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Author keywords
Al doped; MOCVD; ZnO
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Indexed keywords
GRAIN BOUNDARIES;
GRAIN GROWTH;
HALL MOBILITY;
II-VI SEMICONDUCTORS;
METALLIC FILMS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
QUANTUM THEORY;
SEMICONDUCTOR DOPING;
ZINC OXIDE;
AL DOPED;
AL-DOPED ZNO FILMS;
DECOMPOSITION PRODUCTS;
GRAIN BOUNDARY SCATTERING;
OPTICAL AND ELECTRICAL PROPERTIES;
OPTICAL TRANSPARENCY;
PREFERRED ORIENTATIONS;
QUANTUM CONFINEMENT EFFECTS;
ALUMINUM;
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EID: 84863518988
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2012.05.056 Document Type: Article |
Times cited : (18)
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References (18)
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