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Volumn 258, Issue 22, 2012, Pages 8595-8598

Microstructure, optical and electrical properties of Al-doped ZnO films grown by MOCVD

Author keywords

Al doped; MOCVD; ZnO

Indexed keywords

GRAIN BOUNDARIES; GRAIN GROWTH; HALL MOBILITY; II-VI SEMICONDUCTORS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM THEORY; SEMICONDUCTOR DOPING; ZINC OXIDE;

EID: 84863518988     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.05.056     Document Type: Article
Times cited : (18)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.