Spectrally resolved interband and intraband transitions by two-step photon absorption in ingaas/gaas quantum dot solar cells

IEEE Journal of Photovoltaics

Volumn 5, Issue 1, 2015, Pages 229-233

  Tamaki, Ryo ^a   Shoji, Yasushi ^a   Okada, Yoshitaka ^a   Miyano, Kenjiro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Gallium arsenide; III V Semiconductor materials; indium gallium arsenide; photovoltaic cells; quantum dots; spectroscopy

Indexed keywords

GALLIUM ARSENIDE; LIGHT SOURCES; PHOTOELECTROCHEMICAL CELLS; PHOTONS; PHOTOVOLTAIC CELLS; QUANTUM DOT LASERS; SEMICONDUCTING INDIUM; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SPECTROSCOPY; TWO PHOTON PROCESSES;

EXTERNAL QUANTUM EFFICIENCY; II-IV SEMICONDUCTORS; INDIUM GALLIUM ARSENIDE; INTER-BAND TRANSITION; INTERBAND AND INTRABAND TRANSITIONS; INTRABAND TRANSITIONS; PHOTON ABSORPTION PROCESS; QUANTUM DOT SOLAR CELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84919832694     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2014.2368712     Document Type: Article

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