Effect of spacer layer thickness on multi-stacked InGaAs quantum dots grown on GaAs (311)B substrate for application to intermediate band solar cells

Journal of Applied Physics

Volumn 111, Issue 7, 2012, Pages

  Shoji, Yasushi ^a,b   Narahara, Kohei ^a   Tanaka, Hideharu ^c   Kita, Takashi ^c   Akimoto, Katsuhiro ^b   Okada, Yoshitaka ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c KOBE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC COUPLING; EXTERNAL QUANTUM EFFICIENCY; GAAS; IN-PLANE ORDERING; INGAAS QUANTUM DOTS; INGAAS/GAAS; INTERMEDIATE-BAND SOLAR CELLS; PHOTOLUMINESCENCE CHARACTERISTICS; PHOTON ABSORPTIONS; QUANTUM DOT SOLAR CELLS; ROOM TEMPERATURE; SPACER LAYER; SPACER LAYER THICKNESS; THIN SPACER; WAVELENGTH RANGES;

GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84861738312     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3699215     Document Type: Conference Paper

References (19)

1. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982). 10.1063/1.92959
2. M. Asada, Y. Miyamoto, and Y. Suematsu, IEEE J. Quantum Electron. 22, 1915 (1986). 10.1109/JQE.1986.1073149
3. D. Leonard, M. Kishnamurthy, C. M. Reaves, S. P. Denbaars, and P. M. Petroff, Appl. Phys. Lett. 63, 3203 (1993). 10.1063/1.110199
4. A. J. Nozik, Physica E 14, 115 (2002). 10.1016/S1386-9477(02)00374-0
5. W. Shockley and H. J. Queisser, J. Appl. Phys. 32, 510 (1961). 10.1063/1.1736034
6. A. Luque and A. Marti, Phy. Rev. Lett. 78, 5014 (1997). 10.1103/PhysRevLett.78.5014
7. K. Akahane, T. Kawamura, K. Okino, H. Koyama, S. Lan, M. Tosa, Y. Okada, and M. Kawabe, Appl. Phys. Lett. 73, 3411 (1998). 10.1063/1.122781
8. K. Akahane, H. Xu, Y. Okada, and M. Kawabe, Physica E 11, 94 (2001). 10.1016/S1386-9477(01)00182-5
9. Y. Shoji, R. Oshima, A. Takata, and Y. Okada, J. Crystal Growth 312, 226 (2010). 10.1016/j.jcrysgro.2009.10.053
10. Y. Shoji, R. Oshima, A. Takata, and Y. Okada, Physica E 42, 2768 (2010). 10.1016/j.physe.2009.11.095
11. K. Akahane and N. Yamamoto, Physica E 42, 2735 (2010). 10.1016/j.physe.2010.05.023
12. T. Sugaya, T. Amano, M. Mori, and S. Niki, J. Vac. Sci. Technol. B 28, C3C4 (2010). 10.1116/1.3289124
13. M. K. Zundel, P. Specht, K. Eberi, N. Y. Jin-Phillipp, and F. Phillipp, Appl. Phys. Lett. 71, 2972 (1997). 10.1063/1.120233
14. O. Kojima, H. Nakatani, T. Kita, O. Wada, K. Akahane, and M. Tsuchiya, J. Appl. Phys 103, 113504 (2008). 10.1063/1.2936320
15. T. Tagahara, Phys. Rev. B 36, 9293 (1987). 10.1103/PhysRevB.36.9293
16. Y. Okada, T. Morioka, K. Yoshida, R. Oshima, Y. Shoji, T. Inoue, and T. Kita, J. Appl. Phys 109, 024301 (2011). 10.1063/1.3533423
17. K. Yoshida, Y. Okada, and N. Sano, Appl. Phys. Lett. 97, 133503 (2010). 10.1063/1.3488815
18. A. Mart, N. Lpez, E. Antoln, E. Cnovas, and A. Luque, IEEE Trans. Electron Devices 48, 2394 (2001). 10.1109/16.954482
19. K. A. Sablon, J. W. Little, V. Mitin, A. Sergeev, N. Vagidov, and K. Reinhardt, Nano Lett. 11, 2311 (2011). 10.1021/nl200543v