Extremely long carrier lifetime at intermediate states in wall-inserted type II quantum dot absorbers

Journal of Applied Physics

Volumn 112, Issue 9, 2012, Pages

  Sato, Daisuke ^a   Ota, Junya ^a   Nishikawa, Kazutaka ^b   Takeda, Yasuhiko ^b   Miyashita, Naoya ^c   Okada, Yoshitaka ^c  

^a TOYOTA MOTOR CORPORATION   (Japan)

^b Rd Management Section   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; GAAS; INAS; INTERMEDIATE STATE; INTERMEDIATE-BAND SOLAR CELLS; LONG LIFETIME; PHOTOGENERATED CARRIERS; RADIATIVE RECOMBINATION; TYPE II; WALL THICKNESS;

CONCRETE CONSTRUCTION; GALLIUM ARSENIDE; INDIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTING GALLIUM;

EID: 84870927436     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4764030     Document Type: Article

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