In-plane coupling effect on absorption coefficients of-InAs/GaAs quantum dots arrays for intermediate band solar cell

Progress in Photovoltaics: Research and Applications

Volumn 23, Issue 5, 2015, Pages 546-558

  Tomic, Stanko ^a   Sogabe, Tomah ^b   Okada, Yoshitaka ^b  

^a UNIVERSITY OF SALFORD   (United Kingdom)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

high efficiency; IBSC; quantum dots; semiconductors; solar cells

Indexed keywords

EFFICIENCY; ELECTRIC FIELDS; GRAPHENE QUANTUM DOTS; GROUND STATE; III-V SEMICONDUCTORS; INDIUM ARSENIDE; NANOCRYSTALS; NARROW BAND GAP SEMICONDUCTORS; QUANTUM EFFICIENCY; SEMICONDUCTOR MATERIALS; SOLAR CELLS;

ABSORPTION CO-EFFICIENT; ELECTRONIC AND OPTICAL PROPERTIES; EXTERNAL ELECTRIC FIELD; HIGH-EFFICIENCY; IBSC; INAS/GAAS QUANTUM DOTS; INTERMEDIATE-BAND SOLAR CELLS; PERIODIC BOUNDARY CONDITIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84927575656     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2455     Document Type: Article

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