Optical properties of multi-stacked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate

Journal of Applied Physics

Volumn 112, Issue 6, 2012, Pages

  Shoji, Yasushi ^a,b   Akimoto, Katsuhiro ^b   Okada, Yoshitaka ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXTERNAL QUANTUM EFFICIENCY; GAAS; IN-PLANE ORDERING; PHOTON ABSORPTIONS; QD ARRAYS; QUANTUM DOT SOLAR CELLS; ROOM TEMPERATURE; STRAIN-COMPENSATED; TOTAL DENSITY; WAVELENGTH RANGES;

HYDROGEN; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS;

GALLIUM ARSENIDE;

EID: 84867043290     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4752733     Document Type: Article

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