Extremely long carrier lifetime over 200 ns in GaAs wall-inserted type II InAs quantum dots

Applied Physics Letters

Volumn 100, Issue 11, 2012, Pages

  Nishikawa, Kazutaka ^a   Takeda, Yasuhiko ^a   Motohiro, Tomoyoshi ^a   Sato, Daisuke ^b   Ota, Junya ^b   Miyashita, Naoya ^c   Okada, Yoshitaka ^c  

^a Rd Management Section   (Japan)

^b TOYOTA MOTOR CORPORATION   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; INAS; INAS QUANTUM DOTS; LONG LIFETIME; PHOTOGENERATED CARRIERS; TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY; TYPE II;

GALLIUM ARSENIDE; INDIUM ARSENIDE; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTING GALLIUM;

EID: 84859956553     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3694284     Document Type: Article

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