Templating of polycrystalline ZnO with DNA and its performance in field-effect transistors

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 8, 2011, Pages 1983-1988

  Hoffmann, Rudolf C ^a   Atanasova, Petia ^b   Dilfer, Stefan ^a   Bill, Joachim ^b   Schneider, Jörg J ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

DNA; FETs; thin films; ZnO

Indexed keywords

BOTTOM GATE; CHARGE MOBILITIES; CHEMICAL-BATH DEPOSITION; COMPOSITE WIRES; DEOXYRIBONUCLEIC ACIDS; DEPOSITED MATERIALS; DEVICE PERFORMANCE; DNA STRUCTURE; DOUBLE STRANDED DNA; FETS; NANO PARTICULATES; POLYCRYSTALLINE ZNO; SOURCE AND DRAINS; TEMPLATING; ZNO;

CARRIER MOBILITY; MESFET DEVICES; ORGANIC ACIDS; TRANSISTORS; ZINC OXIDE;

DNA;

EID: 80051685357     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127064     Document Type: Article

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