-
1
-
-
0036529338
-
Third generation photovoltaics: Solar cells for 2020 and beyond
-
M.A. Green Third generation photovoltaics: solar cells for 2020 and beyond Physica E 14 2002 65 70
-
(2002)
Physica e
, vol.14
, pp. 65-70
-
-
Green, M.A.1
-
2
-
-
0031164889
-
Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels
-
A. Luque, and A. Martí Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels Phys. Rev. Lett. 78 1997 5014 5017
-
(1997)
Phys. Rev. Lett.
, vol.78
, pp. 5014-5017
-
-
Luque, A.1
Martí, A.2
-
3
-
-
79955688535
-
Detailed balance limit of the efficiency of multilevel intermediate band solar cells
-
T. Nozawa, and Y. Arakawa Detailed balance limit of the efficiency of multilevel intermediate band solar cells Appl. Phys. Lett. 98 2011 171108
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 171108
-
-
Nozawa, T.1
Arakawa, Y.2
-
4
-
-
84857923174
-
Understanding intermediate-band solar cells
-
A. Luque, A. Martí, and C. Stanley Understanding intermediate-band solar cells Nat. Photon. 6 2012 146 152
-
(2012)
Nat. Photon.
, vol.6
, pp. 146-152
-
-
Luque, A.1
Martí, A.2
Stanley, C.3
-
5
-
-
84871328204
-
Self-organized InGaAs/GaAs quantum dot arrays for use in high-efficiency intermediate-band solar cells
-
Y. Shoji, K. Akimoto, and Y. Okada Self-organized InGaAs/GaAs quantum dot arrays for use in high-efficiency intermediate-band solar cells J. Phys. D Appl. Phys. 46 2013 024002
-
(2013)
J. Phys. D Appl. Phys.
, vol.46
, pp. 024002
-
-
Shoji, Y.1
Akimoto, K.2
Okada, Y.3
-
6
-
-
84878167706
-
The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells
-
G. Jolley, L. Fu, H.F. Lu, H.H. Tan, and C. Jagadish The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells Prog. Photovoltaics 21 2013 736 746
-
(2013)
Prog. Photovoltaics
, vol.21
, pp. 736-746
-
-
Jolley, G.1
Fu, L.2
Lu, H.F.3
Tan, H.H.4
Jagadish, C.5
-
7
-
-
79551660696
-
Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell
-
Y. Okada, T. Morioka, K. Yoshida, R. Oshima, Y. Shoji, T. Inoue, and T. Kita Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell J. Appl. Phys. 109 2011 024301
-
(2011)
J. Appl. Phys.
, vol.109
, pp. 024301
-
-
Okada, Y.1
Morioka, T.2
Yoshida, K.3
Oshima, R.4
Shoji, Y.5
Inoue, T.6
Kita, T.7
-
8
-
-
78651334835
-
Engineering the electronic band structure for multiband solar cells
-
N. López, L.A. Reichertz, K.M. Yu, K. Campman, and W. Walukiewicz Engineering the electronic band structure for multiband solar cells Phys. Rev. Lett. 106 2011 028701
-
(2011)
Phys. Rev. Lett.
, vol.106
, pp. 028701
-
-
López, N.1
Reichertz, L.A.2
Yu, K.M.3
Campman, K.4
Walukiewicz, W.5
-
9
-
-
84872697284
-
Experimental verification of intermediate band formation on titanium-implanted silicon
-
H. Castán, E. Pérez, H. García, S. Duenas, L. Bailón, J. Olea, D. Pastor, E. García-Hemme, M. Irigoyen, and G. González-Díaz Experimental verification of intermediate band formation on titanium-implanted silicon J. Appl. Phys. 113 2013 024104
-
(2013)
J. Appl. Phys.
, vol.113
, pp. 024104
-
-
Castán, H.1
Pérez, E.2
García, H.3
Duenas, S.4
Bailón, L.5
Olea, J.6
Pastor, D.7
García-Hemme, E.8
Irigoyen, M.9
González-Díaz, G.10
-
10
-
-
77957736868
-
Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell
-
E. Antolín, A. Martí, C.D. Farmer, P.G. Linares, E. Hernández, A.M. Sánchez, T. Ben, S.I. Molina, C.R. Stanley, and A. Luque Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell J. Appl. Phys. 108 2010 064513
-
(2010)
J. Appl. Phys.
, vol.108
, pp. 064513
-
-
Antolín, E.1
Martí, A.2
Farmer, C.D.3
Linares, P.G.4
Hernández, E.5
Sánchez, A.M.6
Ben, T.7
Molina, S.I.8
Stanley, C.R.9
Luque, A.10
-
11
-
-
34249930363
-
Rate equation model of the negative characteristic temperature of InAs/GaAs quantum dot lasers
-
C.Z. Tong, S.F. Yoon, and C.Y. Liu Rate equation model of the negative characteristic temperature of InAs/GaAs quantum dot lasers J. Appl. Phys. 101 2007 104506
-
(2007)
J. Appl. Phys.
, vol.101
, pp. 104506
-
-
Tong, C.Z.1
Yoon, S.F.2
Liu, C.Y.3
-
12
-
-
77956310991
-
Carrier thermal escape in families of InAs/InP self-assembled quantum dots
-
G. Gélinas, A. Lanacer, R. Leonelli, R.A. Masut, and P.J. Poole Carrier thermal escape in families of InAs/InP self-assembled quantum dots Phys. Rev. B 81 2010 235426
-
(2010)
Phys. Rev. B
, vol.81
, pp. 235426
-
-
Gélinas, G.1
Lanacer, A.2
Leonelli, R.3
Masut, R.A.4
Poole, P.J.5
-
14
-
-
79961033434
-
Lasing in ultra-narrow emission from GaAs quantum dots coupled with a two-dimensional layer
-
M. Jo, T. Mano, and K. Sakoda Lasing in ultra-narrow emission from GaAs quantum dots coupled with a two-dimensional layer Nanotechnology 22 2011 335201
-
(2011)
Nanotechnology
, vol.22
, pp. 335201
-
-
Jo, M.1
Mano, T.2
Sakoda, K.3
-
15
-
-
84869112620
-
Extension of absorption wavelength in GaAs/AlGaAs quantum dots with underlying quantum well for solar cell application
-
M. Elborg, M. Jo, Y. Ding, T. Noda, T. Mano, and K. Sakoda Extension of absorption wavelength in GaAs/AlGaAs quantum dots with underlying quantum well for solar cell application Jpn. J. Appl. Phys. 51 2012 10ND14
-
(2012)
Jpn. J. Appl. Phys.
, vol.51
, pp. 10ND14
-
-
Elborg, M.1
Jo, M.2
Ding, Y.3
Noda, T.4
Mano, T.5
Sakoda, K.6
-
16
-
-
0036529652
-
Design constraints ofthe quantum-dot intermediate band solar cell
-
A. Martí, L. Cuadra, and A. Luque Design constraints ofthe quantum-dot intermediate band solar cell Physica E 14 2012 150
-
(2012)
Physica e
, vol.14
, pp. 150
-
-
Martí, A.1
Cuadra, L.2
Luque, A.3
-
17
-
-
84861809888
-
Extremely high-density GaAs quantum dots grown by droplet epitaxy
-
M. Jo, T. Mano, Y. Sakuma, and K. Sakoda Extremely high-density GaAs quantum dots grown by droplet epitaxy Appl. Phys. Lett. 100 2012 212113
-
(2012)
Appl. Phys. Lett.
, vol.100
, pp. 212113
-
-
Jo, M.1
Mano, T.2
Sakuma, Y.3
Sakoda, K.4
-
18
-
-
0001536709
-
Carrier thermal escape and retrapping in self-assembled quantum dots
-
S. Sanguinetti, M. Henini, M. Grassi Alessi, M. Capizzi, P. Frigeri, and S. Franchi Carrier thermal escape and retrapping in self-assembled quantum dots Phys. Rev. B 60 1999 8276
-
(1999)
Phys. Rev. B
, vol.60
, pp. 8276
-
-
Sanguinetti, S.1
Henini, M.2
Grassi Alessi, M.3
Capizzi, M.4
Frigeri, P.5
Franchi, S.6
-
19
-
-
77956310991
-
Carrier thermal escape in families of InAs/InP self-assembled quantum dots
-
G. Gélinas, A. Lanacer, R. Leonelli, R.A. Masut, and P.J. Poole Carrier thermal escape in families of InAs/InP self-assembled quantum dots Phys. Rev. B 81 2010 235426
-
(2010)
Phys. Rev. B
, vol.81
, pp. 235426
-
-
Gélinas, G.1
Lanacer, A.2
Leonelli, R.3
Masut, R.A.4
Poole, P.J.5
-
20
-
-
0033901726
-
Fano profile in intersubband transitions in InAs quantum dots
-
P.h. Lelong, S.-W. Lee, K. Hirakawa, and H. Sakaki Fano profile in intersubband transitions in InAs quantum dots Physica E 7 2000 174 178
-
(2000)
Physica e
, vol.7
, pp. 174-178
-
-
Lelong, P.H.1
Lee, S.-W.2
Hirakawa, K.3
Sakaki, H.4
-
21
-
-
84878212044
-
Absorption coefficient for the intraband transitions in quantum dot materials
-
A. Luque, A. Martí, A. Mellor, D.F. Marrón, I. Tobías, and E. Antolín Absorption coefficient for the intraband transitions in quantum dot materials Prog. Photovoltaics 21 2012 658
-
(2012)
Prog. Photovoltaics
, vol.21
, pp. 658
-
-
Luque, A.1
Martí, A.2
Mellor, A.3
Marrón, D.F.4
Tobías, I.5
Antolín, E.6
-
22
-
-
0001585076
-
Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots
-
P.W. Fry, J.J. Finley, L.R. Wilson, A. Lemaître, D.J. Mowbray, M.S. Skolnick, M. Hopkinson, G. Hill, and J.C. Clark Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots Appl. Phys. Lett. 77 2000 4344
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 4344
-
-
Fry, P.W.1
Finley, J.J.2
Wilson, L.R.3
Lemaître, A.4
Mowbray, D.J.5
Skolnick, M.S.6
Hopkinson, M.7
Hill, G.8
Clark, J.C.9
-
23
-
-
0000194066
-
Electron escape from InAs quantum dots
-
C.M.A. Kapteyn, F. Heinrichsdorff, O. Stier, R. Heitz, M. Grundmann, N.D. Zakharov, D. Bimberg, and P. Werner Electron escape from InAs quantum dots Phys. Rev. B 60 1999 14265
-
(1999)
Phys. Rev. B
, vol.60
, pp. 14265
-
-
Kapteyn, C.M.A.1
Heinrichsdorff, F.2
Stier, O.3
Heitz, R.4
Grundmann, M.5
Zakharov, N.D.6
Bimberg, D.7
Werner, P.8
-
24
-
-
0000381318
-
Effect of an electric field on the luminescence of GaAs quantum wells
-
E.E. Mendez, G. Bastard, L.L. Chang, L. Esaki, H. Morkoc, and R. Fischer Effect of an electric field on the luminescence of GaAs quantum wells Phys. Rev. B 26 1982 7101
-
(1982)
Phys. Rev. B
, vol.26
, pp. 7101
-
-
Mendez, E.E.1
Bastard, G.2
Chang, L.L.3
Esaki, L.4
Morkoc, H.5
Fischer, R.6
|