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Volumn 113, Issue 2, 2013, Pages

Experimental verification of intermediate band formation on titanium-implanted silicon

(10) Castan H a Perez E a Garcia H a Duenas S a Bailon L a Olea, J b,c Pastor, D b,c Garcia Hemme E b Irigoyen, M b Gonzalez Diaz G b

a UNIVERSITY OF VALLADOLID (Spain)

b UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

c INSTITUTO DE ENERGÍA SOLAR (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ADMITTANCE SPECTROSCOPIES; CAPACITANCE VALUES; CAPACITANCE VOLTAGE; DEEP-LEVELS; ELECTRICAL CHARACTERIZATION; EXPERIMENTAL VERIFICATION; FABRICATED DEVICE; HETEROGENEOUS SYSTEMS; IMPLANTATION DOSE; IMPLANTED LAYERS; INTERMEDIATE BANDS; LASER ANNEALING; LOW TEMPERATURES; SCHOTTKY JUNCTIONS; SILICON LAYER; SOLAR-CELL APPLICATIONS;

CAPACITANCE; TITANIUM;

SILICON;

EID: 84872697284 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4774241 Document Type: Article

Times cited : (36)

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