Low-temperature annealed PbS quantum dot films for scalable and flexible ambipolar thin-film-transistors and circuits

Journal of Materials Chemistry C

Volumn 2, Issue 48, 2014, Pages 10305-10311

  Jo, Chan Ho ^a   Kim, Jae Hyun ^b   Kim, Jaekyun ^b   Kim, Jiwan ^c   Oh, Min Suk ^c   Kang, Moon Sung ^d   Kim, Myung Gil ^b   Kim, Yong Hoon ^e   Ju, Byeong Kwon ^a   Park, Sung Kyu ^b  

^a Korea University   (South Korea)

^b Chung Ang University   (South Korea)

^c Korea Electronic Technology Institute (KETI)   (South Korea)

^d Soongsil University   (South Korea)

^e Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; FLEXIBLE ELECTRONICS; PHOTOLITHOGRAPHY; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; SURFACE DEFECTS; TEMPERATURE; THIN FILM CIRCUITS; THIN FILMS;

ANNEALING TEMPERATURES; DEVICE PERFORMANCE; FIELD-EFFECT MOBILITIES; FLEXIBLE SUBSTRATE; HIGH-TEMPERATURE ANNEALING; LIGAND DECOMPOSITIONS; PHOTOLITHOGRAPHY PROCESS; PLASTIC SUBSTRATES;

THIN FILM TRANSISTORS;

EID: 84911908919     PISSN: 20507534     EISSN: 20507526     Source Type: Journal    
DOI: 10.1039/c4tc01624f     Document Type: Article

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