Low-temperature annealing for highly conductive lead chalcogenide quantum dot solids

Journal of Physical Chemistry C

Volumn 115, Issue 3, 2011, Pages 607-612

  Baik, Seung Jae ^a   Kim, Kyungnam ^b   Lim, Koeng Su ^a   Jung, Somyung ^b   Park, Yun Chang ^c   Han, Dong Geon ^a   Lim, Sooyeon ^a   Yoo, Seunghyup ^a   Jeong, Sohee ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Institute of Machine and Materials   (South Korea)

^c National Nano Fab Center (NNFC)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; DEVICE APPLICATION; ELECTRICAL CONDUCTIVITY; ELECTRICAL PROPERTY; ENHANCED CONDUCTIVITY; HIGH-TEMPERATURE ANNEALING; LAYER-BY-LAYERS; LEAD CHALCOGENIDES; LIGAND EXCHANGES; LOW TEMPERATURE ANNEALING; NANOCRYSTAL QUANTUM DOTS; PERCOLATION MODELS; QUANTUM DOT; QUANTUM DOT SOLIDS; RE-PASSIVATION; ROOM TEMPERATURE; TEMPERATURE DEPENDENT;

ACTIVATION ENERGY; ANNEALING; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC PROPERTIES; OPTICAL WAVEGUIDES; SOLVENTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 78751651319     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp1084668     Document Type: Article

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