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Advanced Materials

Volumn 25, Issue 31, 2013, Pages 4309-4314

Low driving voltage and high mobility ambipolar field-effect transistors with PbS colloidal nanocrystals

(5) Bisri, Satria Zulkarnaen a Piliego, Claudia a Yarema, Maksym b Heiss, Wolfgang b Loi, Maria Antonietta a

a UNIVERSITY OF GRONINGEN (Netherlands)

b JOHANNES KEPLER UNIVERSITY LINZ (Austria)

Author keywords

ambipolar transistor; colloidal nanocrystals; electrolyte gating; layer by layer assembly; metal chalcogenides

Indexed keywords

AMBIPOLAR TRANSISTORS; CHARGE TRANSPORT MECHANISMS; COLLOIDAL NANOCRYSTALS; DEVICE CHARACTERISTICS; ELECTROCHEMICAL GATING; HIGH CARRIER MOBILITY; LAYER-BY-LAYER ASSEMBLIES; METAL CHALCOGENIDE;

FIELD EFFECT TRANSISTORS; HYBRID MATERIALS; OPTOELECTRONIC DEVICES; STRUCTURAL OPTIMIZATION; TRANSPORT PROPERTIES;

NANOCRYSTALS;

EID: 84882442591 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201205041 Document Type: Article

Times cited : (108)

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