Organic field-effect transistor circuits using atomic layer deposited gate dielectrics patterned by reverse stamping

Organic Electronics

Volumn 15, Issue 12, 2014, Pages 3780-3786

  Choi, Sangmoo ^a   Fuentes Hernandez, Canek ^a   Yun, Minseong ^a   Dindar, Amir ^a   Khan, Talha M ^a   Wang, Cheng Yin ^a   Kippelen, Bernard ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Bilayer; Circuits; Interconnection; Organic transistors; Via hole

Indexed keywords

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; GATE DIELECTRICS; NETWORKS (CIRCUITS); STAMPING; TIMING CIRCUITS;

ATOMIC LAYER DEPOSITED; BI-LAYER; INTERCONNECTION; ORGANIC TRANSISTOR; SIMPLE CIRCUITS; SMALL MOLECULES; STAMPING METHODS; VIA HOLE;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 84910027386     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2014.10.022     Document Type: Article

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