Selective area growth of Bernal bilayer epitaxial graphene on 4H-SiC (0001) substrate by electron-beam irradiation

Applied Physics Letters

Volumn 105, Issue 18, 2014, Pages

  Dharmaraj, P ^a   Jeganathan, K ^a   Parthiban, S ^b   Kwon, J Y ^b   Gautam, S ^c   Chae, K H ^c   Asokan, K ^d  

^a BHARATHIDASAN UNIVERSITY   (India)

^b Yonsei University   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

^d INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; ELECTRON-BEAM IRRADIATIONS; EPITAXIAL GRAPHENE; SELECTIVE AREA GROWTH;

EID: 84908566491     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4901074     Document Type: Article

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