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Applied Physics Letters

Volumn 105, Issue 2, 2014, Pages

Intrinsic inhomogeneity in barrier height at monolayer graphene/SiC Schottky junction

(5) Tomer, D a Rajput, S a Hudy, L J a Li, C H b Li, L a

a UNIVERSITY OF WISCONSIN MILWAUKEE (United States)

b NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE; MONOLAYERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SILICON;

IDEALITY FACTORS; INHOMOGENEITIES; RECTIFYING PROPERTIES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY JUNCTIONS; SPATIAL IN-HOMOGENEITY; SPATIAL INHOMOGENEITIES; TEMPERATURE DEPENDENT;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 84904754040 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4890405 Document Type: Article

Times cited : (31)

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