Robust 2D topological insulators in van der Waals heterostructures

ACS Nano

Volumn 8, Issue 10, 2014, Pages 10448-10454

  Kou, Liangzhi ^a   Wu, Shu Chun ^b   Felser, Claudia ^b   Frauenheim, Thomas ^a   Chen, Changfeng ^c   Yan, Binghai ^b,d  

^a UNIVERSITY OF BREMEN   (Germany)

^b MAX PLANCK INSTITUTE FOR CHEMICAL PHYSICS OF SOLIDS   (Germany)

^c UNIVERSITY OF NEVADA   (United States)

^d MAX PLANCK INSTITUT FÜR PHYSIK KOMPLEXER SYSTEME   (Germany)

Author keywords

Dirac Transport; Graphene; topological insulator; van der Waals Heterostructures

Indexed keywords

CALCULATIONS; ELECTRIC INSULATORS; GRAPHENE; INORGANIC COMPOUNDS; INTERFACE STATES; SPIN ORBIT COUPLING; TOPOLOGICAL INSULATORS; VAN DER WAALS FORCES;

CONSTITUENT MATERIALS; DIRAC TRANSPORT; FIRST-PRINCIPLES CALCULATION; LAYERED STRUCTURES; TOPOLOGICAL STATE; TRANSPORT SYSTEMS; TWO DIMENSIONAL (2 D); VAN DER WAALS;

TOPOLOGY;

EID: 84908455191     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn503789v     Document Type: Article

References (45)

1. Qi, X.; Zhang, S. The Quantum Spin Hall Effect and Topological Insulators Phys. Today 2010, 63, 33
2. Moore, J. The Birth of Topological Insulators Nature 2010, 464, 194-198
3. Hasan, M. Z.; Kane, C. L. Colloquium: Topological Insulators Rev. Mod. Phys. 2010, 82, 3045-3067
4. Qi, X.-L.; Zhang, S.-C. Topological Insulators and Superconductors Rev. Mod. Phys. 2011, 83, 1057
5. Bernevig, B. A.; Hughes, T. L.; Zhang, S. C. Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells Science 2006, 314, 1757-1761
6. König, M.; Wiedmann, S.; Brüne, C.; Roth, A.; Buhmann, H.; Molenkamp, L.; Qi, X.-L.; Zhang, S.-C. Quantum Spin Hall Insulator State in HgTe Quantum Wells Science 2007, 318, 766-770
7. 3 with a Single Dirac Cone on the Surface Nat. Phys. 2009, 5, 438-442
8. Xia, Y.; Qian, D.; Hsieh, D.; Wray, L.; Pal, A.; Lin, H.; Bansil, A.; Grauer, D.; Hor, Y. S.; Cava, R. J. et al. Observation of a Large-Gap Topological-Insulator Class with a Single Dirac Cone on the Surface Nat. Phys. 2009, 5, 398-402
9. 3 Nat. Phys. 2013, 9, 709-711
10. Yan, B.; Zhang, S.-C. Topological Materials Rep. Prog. Phys. 2012, 75, 096501
11. Müchler, L.; Zhang, H.; Chadov, S.; Yan, B.; Casper, F.; Kübler, J.; Zhang, S.-C.; Felser, C. Topological Insulators from a Chemists Perspective Angew. Chem. 2012, 124, 7333-7337
12. Liu, C.; Hughes, T. L.; Qi, X.-L.; Wang, K.; Zhang, S.-C. Quantum Spin Hall Effect in Inverted Type-II Semiconductors Phys. Rev. Lett. 2008, 100, 236601
13. Knez, I.; Du, R.-R.; Sullivan, G. Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells Phys. Rev. Lett. 2011, 107, 136603
14. Miao, M.; Yan, Q.; Van de Walle, C.; Lou, W.; Li, L.; Chang, K. Polarization-Driven Topological Insulator Transition in a Quantum Well Phys. Rev. Lett. 2012, 109, 186803
15. Zhang, D.; Lou, W.; Miao, M.; Zhang, S.-C.; Chang, K. Interface-Induced Topological Insulator Transition in a Quantum Well Phys. Rev. Lett. 2013, 111, 156402
16. Zhang, H.; Xu, Y.; Wang, J.; Zhang, S.-C. Quantum Spin Hall and Quantum Anomalous Hall States Realized in Junction Quantum Wells Phys. Rev. Lett. 2014, 112, 216803
17. Geim, A. K.; Grigorieva, I. V. van der Waals Heterostructures Nature 2013, 499, 419-425
18. Kou, L.; Yan, B.; Hu, F.; Wu, S.-C.; Wehling, T. O.; Felser, C.; Chen, C.; Frauenheim, T. Graphene-Based Topological Insulator with an Intrinsic Bulk Gap above Room Temperature Nano Lett. 2013, 13, 6251-6255
19. Xu, G.; Wang, J.; Yan, B.; Qi, X.-L. Topological Superconductivity at the Edge of Transition Metal Dichalcogenides, arXiv:1308.5664, 2013.
20. Chu, R.-L.; Liu, G.-B.; Yao, W.; Xu, X.; Xiao, D.; Zhang, C. Spin-Orbit-Coupled Quantum Wires and Majorana Fermions on Zigzag Edges of Monolayer Transition-Metal Dichalcogenides Phys. Rev. B 2014, 89, 155317
21. Oreg, Y.; Refael, G.; von Oppen, F. Energy Relaxation and Thermalization of Hot Electrons in Quantum Wires Phys. Rev. Lett. 2010, 105, 226407
22. Lutchyn, R. M.; Sau, J. D.; Sarma, S. D. Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures Phys. Rev. Lett. 2010, 105, 077001
23. Kane, C. L.; Mele, E. J. Quantum Spin Hall Effect in Graphene Phys. Rev. Lett. 2005, 95, 226801
24. Weeks, C.; Hu, J.; Alicea, J.; Franz, M.; Wu, R. Engineering a Robust Quantum Spin Hall State in Graphene via Adatom Deposition Phys. Rev. X 2011, 1, 021001
25. Qiao, Z.; Tse, W.-K.; Jiang, H.; Yao, Y.; Niu, Q. Two-Dimensional Topological Insulator State and Topological Phase Transition in Bilayer Graphene Phys. Rev. Lett. 2011, 107, 256801
26. Hu, J.; Alicea, J.; Wu, R.; Franz, M. Giant Topological Insulator Gap in Graphene with 5d Adatoms Phys. Rev. Lett. 2012, 109, 266801
27. Ishizaka, K.; Bahramy, M. S.; Murakawa, H.; Sakano, M.; Shimojima, T.; Sonobe, T.; Koizumi, K.; Shin, S.; Miyahara, H.; Kimura, A. et al. Giant Rashba-Type Spin Splitting in Bulk BiTeI Nat. Mater. 2011, 10, 521-526
28. Bahramy, M.; Yang, B.-J.; Arita, R.; Nagaosa, N. Emergence of Non-centrosymmetric Topological Insulating Phase in BiTeI under Pressure Nat. Commun. 2012, 3, 679
29. Bychkov, A. Y.; Rashba, I. E. Oscillatory Effects and the Magnetic Susceptibility of Carriers in Inversion Layers J. Phys. C: Solid State Phys. 1984, 17, 6039-6045
30. Chen, Y. L.; Kanou, M.; Liu, Z. K.; Zhang, H. J.; Sobota, J. A.; Leuenberger, D.; Mo, S. K.; Zhou, B.; Yang, S.-L.; Kirchmann, P. S. et al. Discovery of a Single Topological Dirac Fermion in the Strong Inversion Asymmetric Compound BiTeCl Nat. Phys. 2013, 9, 704-708
31. Neto, A. H. C.; Guinea, F.; Peres, N. M. R.; Novoselov, K. S.; Geim, A. K. The Electronic Properties of Graphene Rev. Mod. Phys. 2009, 81, 109-162
32. Jiang, H.; Qiao, Z.; Liu, H.; Shi, J.; Niu, Q. Stabilizing Topological Phases in Graphene via Random Adsorption Phys. Rev. Lett. 2012, 109, 116803
33. Qiao, Z.; Ren, W.; Chen, H.; Bellaiche, L.; Zhang, Z.; MacDonald, A. H.; Niu, Q. Quantum Anomalous Hall Effect in Graphene Proximity Coupled to an Antiferromagnetic Insulator Phys. Rev. Lett. 2014, 112, 116404
34. Yao, Y.; Ye, F.; Qi, X.-L.; Zhang, S.-C.; Fang, Z. Spin-Orbit Gap of Graphene: First-Principles Calculations Phys. Rev. B 2007, 75, 041401
35. Fu, L.; Kane, C. L. Topological Insulators with Inversion Symmetry Phys. Rev. B 2007, 76, 045302
36. Meyer, B.; Marx, D. Density-Functional Study of the Structure and Stability of ZnO Surfaces Phys. Rev. B 2003, 67, 035403
37. Novoselov, K. S. Nobel Lecture: Graphene: Materials in the Flatland Rev. Mod. Phys. 2011, 83, 837-849
38. Bresnehan, M. S.; Hollander, M. J.; Wetherington, M.; LaBella, M.; Trumbull, K. A.; Cavalero, R.; Snyder, D. W.; Robinson, J. A. Integration of Hexagonal Boron Nitride with Quasi-Freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices ACS Nano 2012, 6, 5234-5241
39. Dang, W.; Peng, H.; Li, H.; Wang, P.; Liu, Z. Epitaxial Heterostructures of Ultrathin Topological Insulator Nanoplate and Graphene Nano Lett. 2010, 10, 2870-2876
40. 3 Thin Films Grown on Double-Layer Graphene by Molecular Beam Epitaxy Appl. Phys. Lett. 2010, 97, 143118
41. 2TeI Russ. Chem. Bull. 2005, 54, 87
42. 2TeI Phys. Rev. B 2014, 89, 041409(R)
43. Kresse, G.; Furthmüller, J. Efficient Iterative Schemes for Ab Initio Total-Energy Calculations Using a Plane-Wave Basis Set Phys. Rev. B 1996, 54, 11169-11186
44. Grimme, S. Semiempirical GGA-Type Density Functional Constructed with a Long-Range Dispersion Correction J. Comput. Chem. 2006, 27, 1787-1799
45. Marzari, N.; Vanderbilt, D. Maximally Localized Generalized Wannier Functions for Composite Energy Bands Phys. Rev. B 1997, 56, 12847