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Physical Review Letters

Volumn 109, Issue 18, 2012, Pages

Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well

(6) Miao, M S a,c Yan, Q a Van De Walle, C G a Lou, W K b Li, L L b Chang, K b,c

a UNIVERSITY OF CALIFORNIA (United States)

b INSTITUTE OF SEMICONDUCTORS (China)

c BEIJING COMPUTATIONAL SCIENCE RESEARCH CENTER (China)

Author keywords

[No Author keywords available]

Indexed keywords

FIRST-PRINCIPLES CALCULATION; INN LAYERS; LAYER STRUCTURES; NANOSCALE ENGINEERING; NARROW GAP; SPIN ORBIT INTERACTIONS; TOPOLOGICAL INSULATORS; ULTRA-THIN;

CALCULATIONS; ELECTRIC INSULATORS; GALLIUM NITRIDE; POLARIZATION; SOLIDS;

HAMILTONIANS;

EID: 84868325439 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.109.186803 Document Type: Article

Times cited : (177)

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