Graphene-based topological insulator with an intrinsic bulk band gap above room temperature

Nano Letters

Volumn 13, Issue 12, 2013, Pages 6251-6255

  Kou, Liangzhi ^a   Yan, Binghai ^b,c   Hu, Feiming ^a   Wu, Shu Chun ^b   Wehling, Tim O ^a   Felser, Claudia ^b   Chen, Changfeng ^d   Frauenheim, Thomas ^a  

^a UNIVERSITY OF BREMEN   (Germany)

^b MAX PLANCK INSTITUTE FOR CHEMICAL PHYSICS OF SOLIDS   (Germany)

^c MAX PLANCK INSTITUT FÜR PHYSIK KOMPLEXER SYSTEME   (Germany)

^d UNIVERSITY OF NEVADA   (United States)

Author keywords

band inversion; graphene; large bandgap; quantum well; strain engineering; Topological insulator

Indexed keywords

BAND INVERSION; EXPERIMENTAL REALIZATIONS; FULLY SPIN-POLARIZED; INTRINSIC SPIN-ORBIT COUPLINGS; QUANTUM SPIN HALLS; QUANTUM STATE OF MATTERS; STRAIN ENGINEERING; TOPOLOGICAL INSULATORS;

ELECTRIC INSULATORS; ENERGY GAP; QUANTUM HALL EFFECT; QUANTUM THEORY; SEMICONDUCTOR QUANTUM WELLS; SPIN HALL EFFECT;

GRAPHENE;

BISMUTH; GRAPHITE; NANOMATERIAL; QUANTUM DOT; SELENIUM;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; ELECTRONICS; SURFACE PROPERTY; TEMPERATURE;

BISMUTH; ELECTRONICS; GRAPHITE; MEMBRANES, ARTIFICIAL; NANOSTRUCTURES; QUANTUM DOTS; SELENIUM; SURFACE PROPERTIES; TEMPERATURE;

EID: 84890415956     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl4037214     Document Type: Article

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