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Volumn 97, Issue 14, 2010, Pages

Topological insulator Bi2 Se3 thin films grown on double-layer graphene by molecular beam epitaxy

(17) Song, Can Li a,b Wang, Yi Lin a Jiang, Ye Ping a,b Zhang, Yi a Chang, Cui Zu a,b Wang, Lili a He, Ke a Chen, Xi b Jia, Jin Feng b Wang, Yayu b Fang, Zhong a Dai, Xi a Xie, Xin Cheng a Qi, Xiao Liang c Zhang, Shou Cheng c Xue, Qi Kun a,b Ma, Xucun a

a INSTITUTE OF PHYSICS (China)

b TSINGHUA UNIVERSITY (China)

c STANFORD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; AS-GROWN FILMS; DOUBLE LAYERS; IN-SITU; LAYER-BY-LAYER GROWTH; LOW DEFECT DENSITIES; RICH CONDITIONS;

DEFECT DENSITY; ELECTRIC INSULATORS; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; GRAPHENE; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THIN FILMS; TOPOLOGY;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 77958023483 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3494595 Document Type: Article

Times cited : (190)

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