Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction

Optics Communications

Volumn 336, Issue , 2015, Pages 1-4

  Zhao, Yang ^a   Wang, Hui ^b   Wu, Chao ^a   Li, Wancheng ^a   Gao, Fubin ^a   Wu, Guoguang ^a   Zhang, Baolin ^a   Du, Guotong ^a,c  

^a JILIN UNIVERSITY   (China)

^b HENAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Electroluminescence; MOCVD; NiO; ZnO

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIODES; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; LIGHT; MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NICKEL OXIDE; ORGANIC CHEMICALS; ORGANOMETALLICS; ZINC OXIDE;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); BAND DIAGRAMS; ELECTROLUMINESCENCE PROPERTIES; ELECTROLUMINESCENCE SPECTRUM; FORWARD BIAS; GREEN LUMINESCENCE; RADIO FREQUENCY MAGNETRON SPUTTERING; TURN-ON VOLTAGES;

ELECTROLUMINESCENCE;

EID: 84908321164     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optcom.2014.09.021     Document Type: Article

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