-
2
-
-
79952146219
-
-
P. Heremans, G. H. Gelinck, R. Müller, K. J. Baeg, D. Y. Kim, and Y. Y. Noh, Chem. Mater. 23, 341 (2011). 10.1021/cm102006v
-
(2011)
Chem. Mater.
, vol.23
, pp. 341
-
-
Heremans, P.1
Gelinck, G.H.2
Müller, R.3
Baeg, K.J.4
Kim, D.Y.5
Noh, Y.Y.6
-
3
-
-
79954626785
-
-
W. L. Leong, N. Mathews, B. Tan, S. Vaidyanathan, F. Dötz, and S. Mhaisalkar, J. Mater. Chem. 21, 5203 (2011). 10.1039/c0jm03974h
-
(2011)
J. Mater. Chem.
, vol.21
, pp. 5203
-
-
Leong, W.L.1
Mathews, N.2
Tan, B.3
Vaidyanathan, S.4
Dötz, F.5
Mhaisalkar, S.6
-
4
-
-
72149099927
-
-
T. Sekitani, T. Yokota, U. Zschieschang, H. Klauk, S. Bauer, K. Takeuchi, M. Takamiya, T. Sakurai, and T. Someya, Science 326, 1516 (2009). 10.1126/science.1179963
-
(2009)
Science
, vol.326
, pp. 1516
-
-
Sekitani, T.1
Yokota, T.2
Zschieschang, U.3
Klauk, H.4
Bauer, S.5
Takeuchi, K.6
Takamiya, M.7
Sakurai, T.8
Someya, T.9
-
5
-
-
74349102645
-
-
K. J. Baeg, Y. Y. Noh, H. Sirringhaus, and D. Y. Kim, Adv. Funct. Mater. 20, 224 (2010). 10.1002/adfm.200901677
-
(2010)
Adv. Funct. Mater.
, vol.20
, pp. 224
-
-
Baeg, K.J.1
Noh, Y.Y.2
Sirringhaus, H.3
Kim, D.Y.4
-
7
-
-
84863101771
-
-
X. J. She, C. H. Liu, Q. J. Sun, X. Gao, and S. D. Wang, Org. Electron. 13, 1908 (2012). 10.1016/j.orgel.2012.05.051
-
(2012)
Org. Electron.
, vol.13
, pp. 1908
-
-
She, X.J.1
Liu, C.H.2
Sun, Q.J.3
Gao, X.4
Wang, S.D.5
-
8
-
-
84872689165
-
-
X. Gao, X. J. She, C. H. Liu, Q. J. Sun, J. Liu, and S. D. Wang, Appl. Phys. Lett. 102, 023303 (2013). 10.1063/1.4776677
-
(2013)
Appl. Phys. Lett.
, vol.102
, pp. 023303
-
-
Gao, X.1
She, X.J.2
Liu, C.H.3
Sun, Q.J.4
Liu, J.5
Wang, S.D.6
-
10
-
-
77955152124
-
-
T. W. Kim, Y. Gao, O. Acton, H. L. Yip, H. Ma, H. Chen, and A. K. Y. Jen, Appl. Phys. Lett. 97, 023310 (2010). 10.1063/1.3464292
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 023310
-
-
Kim, T.W.1
Gao, Y.2
Acton, O.3
Yip, H.L.4
Ma, H.5
Chen, H.6
Jen, A.K.Y.7
-
11
-
-
77951190481
-
-
S. Wang, J. Pu, D. S. H. Chan, B. J. Cho, and K. P. Loh, Appl. Phys. Lett. 96, 143109 (2010). 10.1063/1.3383234
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 143109
-
-
Wang, S.1
Pu, J.2
Chan, D.S.H.3
Cho, B.J.4
Loh, K.P.5
-
12
-
-
84883137198
-
-
A. Mishra, A. Janardanan, M. Khare, H. Kalita, and A. Kottantharayil, IEEE Electron Device Lett. 34, 1136 (2013). 10.1109/LED.2013.2272643
-
(2013)
IEEE Electron Device Lett.
, vol.34
, pp. 1136
-
-
Mishra, A.1
Janardanan, A.2
Khare, M.3
Kalita, H.4
Kottantharayil, A.5
-
13
-
-
84890473822
-
-
C. Kim, J. M. Song, J. S. Lee, and M. J. Lee, Nanotechnology 25, 014016 (2014). 10.1088/0957-4484/25/1/014016
-
(2014)
Nanotechnology
, vol.25
, pp. 014016
-
-
Kim, C.1
Song, J.M.2
Lee, J.S.3
Lee, M.J.4
-
14
-
-
84889259231
-
-
Y. Zhou, S. T. Han, Y. Yan, L. B. Huang, L. Zhou, J. Huang, and V. A. L. Roy, Sci. Rep. 3, 3093 (2013). 10.1038/srep03093
-
(2013)
Sci. Rep.
, vol.3
, pp. 3093
-
-
Zhou, Y.1
Han, S.T.2
Yan, Y.3
Huang, L.B.4
Zhou, L.5
Huang, J.6
Roy, V.A.L.7
-
15
-
-
84879661413
-
-
B. Cho, K. Kim, C. L. Chen, A. M. Shen, Q. Truong, and Y. Chen, Small 9, 2283 (2013). 10.1002/smll.201202593
-
(2013)
Small
, vol.9
, pp. 2283
-
-
Cho, B.1
Kim, K.2
Chen, C.L.3
Shen, A.M.4
Truong, Q.5
Chen, Y.6
-
16
-
-
84873627210
-
-
S. T. Han, Y. Zhou, C. Wang, L. He, W. Zhang, and V. A. L. Roy, Adv. Mater. 25, 872 (2013). 10.1002/adma.201203509
-
(2013)
Adv. Mater.
, vol.25
, pp. 872
-
-
Han, S.T.1
Zhou, Y.2
Wang, C.3
He, L.4
Zhang, W.5
Roy, V.A.L.6
-
17
-
-
84885006403
-
-
X. J. She, J. Liu, J. Y. Zhang, X. Gao, and S. D. Wang, Appl. Phys. Lett. 103, 133303 (2013). 10.1063/1.4822181
-
(2013)
Appl. Phys. Lett.
, vol.103
, pp. 133303
-
-
She, X.J.1
Liu, J.2
Zhang, J.Y.3
Gao, X.4
Wang, S.D.5
-
18
-
-
36248962599
-
-
S. D. Wang, T. Minari, T. Miyadera, K. Tsukagoshi, and Y. Aoyagi, Appl. Phys. Lett. 91, 203508 (2007). 10.1063/1.2813640
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 203508
-
-
Wang, S.D.1
Minari, T.2
Miyadera, T.3
Tsukagoshi, K.4
Aoyagi, Y.5
-
19
-
-
84908183042
-
-
X. Gao, C. H. Liu, X. J. She, Q. L. Li, J. Liu, and S. D. Wang, Org. Electron. 15, 2486 (2014). 10.1016/j.orgel.2014.07.018
-
(2014)
Org. Electron.
, vol.15
, pp. 2486
-
-
Gao, X.1
Liu, C.H.2
She, X.J.3
Li, Q.L.4
Liu, J.5
Wang, S.D.6
-
20
-
-
78449291907
-
-
H. Y. Jeong, J. Y. Kim, J. W. Kim, J. O. Hwang, J. E. Kim, J. Y. Lee, T. H. Yoon, B. J. Cho, S. O. Kim, R. S. Ruoff, and S. Y. Choi, Nano Lett. 10, 4381 (2010). 10.1021/nl101902k
-
(2010)
Nano Lett.
, vol.10
, pp. 4381
-
-
Jeong, H.Y.1
Kim, J.Y.2
Kim, J.W.3
Hwang, J.O.4
Kim, J.E.5
Lee, J.Y.6
Yoon, T.H.7
Cho, B.J.8
Kim, S.O.9
Ruoff, R.S.10
Choi, S.Y.11
-
22
-
-
0001181304
-
-
J. Schwan, S. Ulrich, V. Batori, H. Ehrhardt, and S. R. P. Silva, J. Appl. Phys. 80, 440 (1996). 10.1063/1.362745
-
(1996)
J. Appl. Phys.
, vol.80
, pp. 440
-
-
Schwan, J.1
Ulrich, S.2
Batori, V.3
Ehrhardt, H.4
Silva, S.R.P.5
-
23
-
-
84874080158
-
-
X. J. She, C. H. Liu, J. Y. Zhang, X. Gao, and S. D. Wang, Appl. Phys. Lett. 102, 053303 (2013). 10.1063/1.4790186
-
(2013)
Appl. Phys. Lett.
, vol.102
, pp. 053303
-
-
She, X.J.1
Liu, C.H.2
Zhang, J.Y.3
Gao, X.4
Wang, S.D.5
-
24
-
-
84885628743
-
-
X. J. She, J. Liu, J. Y. Zhang, X. Gao, and S. D. Wang, Appl. Phys. Lett. 103, 143302 (2013). 10.1063/1.4824213
-
(2013)
Appl. Phys. Lett.
, vol.103
, pp. 143302
-
-
She, X.J.1
Liu, J.2
Zhang, J.Y.3
Gao, X.4
Wang, S.D.5
-
25
-
-
69549108126
-
-
M. Debucquoy, M. Rockelé, J. Genoe, G. H. Gelinck, and P. Heremans, Org. Electron. 10, 1252 (2009). 10.1016/j.orgel.2009.07.005
-
(2009)
Org. Electron.
, vol.10
, pp. 1252
-
-
Debucquoy, M.1
Rockelé, M.2
Genoe, J.3
Gelinck, G.H.4
Heremans, P.5
-
26
-
-
84908183041
-
-
27-based OFET memories measured in dark.
-
-
-
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