Spatial profile of charge storage in organic field-effect transistor nonvolatile memory using polymer electret

Applied Physics Letters

Volumn 103, Issue 14, 2013, Pages

  She, Xiao Jian ^a   Liu, Jie ^a   Zhang, Jing Yu ^a   Gao, Xu ^a   Wang, Sui Dong ^a  

^a SOOCHOW UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRETS; ELECTRONS; FERMI LEVEL; NAPHTHALENE; ORGANIC FIELD EFFECT TRANSISTORS;

EFFECTIVE APPROACHES; ELECTRON STORAGE; ELECTRON TRAPPING; HOLE ACCUMULATION; MEMORY PERFORMANCE; NON-VOLATILE MEMORY; SPATIAL PROFILES; SPATIALLY HOMOGENEOUS;

NONVOLATILE STORAGE;

EID: 84885628743     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4824213     Document Type: Article

References (18)

1. J. C. Scott and L. D. Bozano, Adv. Mater. 19, 1452 (2007). 10.1002/adma.200602564
2. P. Heremans, G. H. Gelinck, R. Müller, K. J. Baeg, D. Y. Kim, and Y. Y. Noh, Chem. Mater. 23, 341 (2011). 10.1021/cm102006v
3. W. L. Leong, N. Mathews, B. Tan, S. Vaidyanathan, F. Dötz, and S. Mhaisalkar, J. Mater. Chem. 21, 5203 (2011). 10.1039/c0jm03974h
4. T. B. Singh, N. Marjanović, G. J. Matt, N. S. Sariciftci, R. Schwödiauer, and S. Bauer, Appl. Phys. Lett. 85, 5409 (2004). 10.1063/1.1828236
5. K. J. Baeg, Y. Y. Noh, J. Ghim, S. J. Kang, H. Lee, and D. Y. Kim, Adv. Mater. 18, 3179 (2006). 10.1002/adma.200601434
6. K. J. Baeg, Y. Y. Noh, J. G. B. Lim, and D. Y. Kim, Adv. Funct. Mater. 18, 3678 (2008). 10.1002/adfm.200800378
7. Y. L. Guo, C. A. Di, S. H. Ye, X. N. Sun, J. Zheng, Y. G. Wen, W. P. Wu, G. Yu, and Y. Q. Liu, Adv. Mater. 21, 1954 (2009). 10.1002/adma.200802430
8. S. J. Kim and J. S. Lee, Nano Lett. 10, 2884, (2010). 10.1021/nl1009662
9. K. J. Baeg, Y. Y. Noh, H. Sirringhaus, and D. Y. Kim, Adv. Funct. Mater. 20, 224 (2010). 10.1002/adfm.200901677
10. S. T. Han, Y. Zhou, Z. X. Xu, V. A. L. Roy, and T. F. Hung, J. Mater. Chem. 21, 14575 (2011). 10.1039/c1jm12113h
11. X. J. She, C. H. Liu, Q. J. Sun, X. Gao, and S. D. Wang, Org. Electron. 13, 1908 (2012). 10.1016/j.orgel.2012.05.051
12. X. Gao, X. J. She, C. H. Liu, Q. J. Sun, J. Liu, and S. D. Wang, Appl. Phys. Lett. 102, 023303 (2013). 10.1063/1.4776677
13. S. D. Wang, T. Minari, T. Miyadera, K. Tsukagoshi, and Y. Aoyagi, Appl. Phys. Lett. 91, 203508 (2007). 10.1063/1.2813640
14. X. J. She, C. H. Liu, J. Y. Zhang, X. Gao, and S. D. Wang, Appl. Phys. Lett. 102, 053303 (2013). 10.1063/1.4790186
15. S. M. Sze, Physics of Semiconductor Devices (Wiley Interscience, New York, 1981).
16. M. Debucquoy, M. Rockele, J. Genoe, G. H. Gelinck, and P. Heremans, Org. Electron. 10, 1252 (2009). 10.1016/j.orgel.2009.07.005
17. Y. L. Guo, J. Zhang, G. Yu, J. Zheng, L. Zhang, Y. Zhao, Y. G. Wen, and Y. Q. Liu, Org. Electron. 13, 1969 (2012). 10.1016/j.orgel.2012.05.007
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