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Applied Physics Letters

Volumn 102, Issue 5, 2013, Pages

Elucidation of ambient gas effects in organic nano-floating-gate nonvolatile memory

(5) She, Xiao Jian a Liu, Chang Hai a Zhang, Jing Yu a Gao, Xu a Wang, Sui Dong a

a SOOCHOW UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT GAS; DEVICE OPERATIONS; ELECTRON TRAPPING; FIELD-EFFECT MOBILITIES; HOLE TRAPPING; IN-VACUUM; MEMORY PERFORMANCE; MEMORY WINDOW; NON-VOLATILE MEMORIES; ON/OFF RATIO; PENTACENES; RETENTION ABILITY; THRESHOLD VOLTAGE SHIFTS; TRAP STATE;

ORGANIC FIELD EFFECT TRANSISTORS;

TRANSPORT PROPERTIES;

EID: 84874080158 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4790186 Document Type: Article

Times cited : (17)

References (30)

1
- 2342486652
- 10.1038/nature02498
- S. R. Forrest, Nature 428, 911 (2004). 10.1038/nature02498
- (2004) Nature , vol.428 , pp. 911
- Forrest, S.R.¹

2
- 72149099927
- 10.1126/science.1179963
- T. Sekitani, T. Yokota, U. Zschieschang, H. Klauk, S. Bauer, K. Takeuchi, M. Takamiya, T. Sakurai, and T. Someya, Science 326, 1516 (2009). 10.1126/science.1179963
- (2009) Science , vol.326 , pp. 1516
- Sekitani, T.¹ Yokota, T.² Zschieschang, U.³ Klauk, H.⁴ Bauer, S.⁵ Takeuchi, K.⁶ Takamiya, M.⁷ Sakurai, T.⁸ Someya, T.⁹

3
- 78149460920
- 10.1002/adma.201000740
- Y. L. Guo, G. Yu, and Y. Q. Liu, Adv. Mater. 22, 4427 (2010). 10.1002/adma.201000740
- (2010) Adv. Mater. , vol.22 , pp. 4427
- Guo, Y.L.¹ Yu, G.² Liu, Y.Q.³

4
- 79952146219
- 10.1021/cm102006v
- P. Heremans, G. H. Gelinck, R. Müller, K. J. Baeg, D. Y. Kim, and Y. Y. Noh, Chem. Mater. 23, 341 (2011). 10.1021/cm102006v
- (2011) Chem. Mater. , vol.23 , pp. 341
- Heremans, P.¹ Gelinck, G.H.² Müller, R.³ Baeg, K.J.⁴ Kim, D.Y.⁵ Noh, Y.Y.⁶

5
- 79954626785
- 10.1039/c0jm03974h
- W. L. Leong, N. Mathews, B. Tan, S. Vaidyanathan, F. Dötz, and S. Mhaisalkar, J. Mater. Chem. 21, 5203 (2011). 10.1039/c0jm03974h
- (2011) J. Mater. Chem. , vol.21 , pp. 5203
- Leong, W.L.¹ Mathews, N.² Tan, B.³ Vaidyanathan, S.⁴ Dötz, F.⁵ Mhaisalkar, S.⁶

6
- 84863101771
- 10.1016/j.orgel.2012.05.051
- X. J. She, C. H. Liu, Q. J. Sun, X. Gao, and S. D. Wang, Org. Electron. 13, 1908 (2012). 10.1016/j.orgel.2012.05.051
- (2012) Org. Electron. , vol.13 , pp. 1908
- She, X.J.¹ Liu, C.H.² Sun, Q.J.³ Gao, X.⁴ Wang, S.D.⁵

7
- 81855172210
- 10.1039/c1jm12113h
- S. T. Han, Y. Zhou, Z. X. Xu, V. A. L. Roy, and T. F. Hung, J. Mater. Chem. 21, 14575 (2011). 10.1039/c1jm12113h
- (2011) J. Mater. Chem. , vol.21 , pp. 14575
- Han, S.T.¹ Zhou, Y.² Xu, Z.X.³ Roy, V.A.L.⁴ Hung, T.F.⁵

8
- 74349102645
- 10.1002/adfm.200901677
- K. J. Baeg, Y. Y. Noh, H. Sirringhaus, and D. Y. Kim, Adv. Funct. Mater. 20, 224 (2010). 10.1002/adfm.200901677
- (2010) Adv. Funct. Mater. , vol.20 , pp. 224
- Baeg, K.J.¹ Noh, Y.Y.² Sirringhaus, H.³ Kim, D.Y.⁴

9
- 77951823508
- 10.1109/LED.2010.2041743
- Y. M. Kim, S. J. Kim, and J. S. Lee, IEEE Electron Device Lett. 31, 503 (2010). 10.1109/LED.2010.2041743
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 503
- Kim, Y.M.¹ Kim, S.J.² Lee, J.S.³

10
- 77952988029
- 10.1063/1.3432667
- W. Wang and D. G. Ma, Appl. Phys. Lett. 96, 203304 (2010). 10.1063/1.3432667
- (2010) Appl. Phys. Lett. , vol.96 , pp. 203304
- Wang, W.¹ Ma, D.G.²

11
- 69349094986
- 10.1021/ja904882m
- C. W. Tseng and Y. T. Tao, J. Am. Chem. Soc. 131, 12441 (2009). 10.1021/ja904882m
- (2009) J. Am. Chem. Soc. , vol.131 , pp. 12441
- Tseng, C.W.¹ Tao, Y.T.²

12
- 69549108126
- 10.1016/j.orgel.2009.07.005
- M. Debucquoy, M. Rockele, J. Genoe, G. H. Gelinck, and P. Heremans, Org. Electron. 10, 1252 (2009). 10.1016/j.orgel.2009.07.005
- (2009) Org. Electron. , vol.10 , pp. 1252
- Debucquoy, M.¹ Rockele, M.² Genoe, J.³ Gelinck, G.H.⁴ Heremans, P.⁵

13
- 67649344784
- 10.1002/adma.200802173
- D. Knipp and J. E. Northrup, Adv. Mater. 21, 2511 (2009). 10.1002/adma.200802173
- (2009) Adv. Mater. , vol.21 , pp. 2511
- Knipp, D.¹ Northrup, J.E.²

14
- 58149218267
- 10.1088/0957-4484/20/2/025203
- T. Hallam, C. M. Duffy, T. Minakata, M. Ando, and H. Sirringhaus, Nanotechnology 20, 025203 (2009). 10.1088/0957-4484/20/2/025203
- (2009) Nanotechnology , vol.20 , pp. 025203
- Hallam, T.¹ Duffy, C.M.² Minakata, T.³ Ando, M.⁴ Sirringhaus, H.⁵

15
- 48749091583
- 10.1103/PhysRevB.78.035334
- W. L. Kalb, K. Mattenberger, and B. Batlogg, Phys. Rev. B 78, 035334 (2008). 10.1103/PhysRevB.78.035334
- (2008) Phys. Rev. B , vol.78 , pp. 035334
- Kalb, W.L.¹ Mattenberger, K.² Batlogg, B.³

16
- 38949167536
- 10.1063/1.2841918
- G. Gu and M. G. Kane, Appl. Phys. Lett. 92, 053305 (2008). 10.1063/1.2841918
- (2008) Appl. Phys. Lett. , vol.92 , pp. 053305
- Gu, G.¹ Kane, M.G.²

17
- 35348952731
- 10.1016/j.orgel.2007.06.005
- A. Benor, A. Hoppe, W. Wagner, and D. Kinnp, Org. Electron. 8, 749 (2007). 10.1016/j.orgel.2007.06.005
- (2007) Org. Electron. , vol.8 , pp. 749
- Benor, A.¹ Hoppe, A.² Wagner, W.³ Kinnp, D.⁴

18
- 33846291846
- 10.1063/1.2403241
- G. Gu, M. G. Kane, and S. C. Mau, J. Appl. Phys. 101, 014504 (2007). 10.1063/1.2403241
- (2007) J. Appl. Phys. , vol.101 , pp. 014504
- Gu, G.¹ Kane, M.G.² Mau, S.C.³

19
- 33845439337
- 10.1063/1.2396924
- K. P. Pernstich, D. Oberhoff, C. Goldmann, and B. Batlogg, Appl. Phys. Lett. 89, 213509 (2006). 10.1063/1.2396924
- (2006) Appl. Phys. Lett. , vol.89 , pp. 213509
- Pernstich, K.P.¹ Oberhoff, D.² Goldmann, C.³ Batlogg, B.⁴

20
- 32444436987
- 10.1063/1.2171479
- C. Goldmann, D. J. Gundlach, and B. Batlogg, Appl. Phys. Lett. 88, 063501 (2006). 10.1063/1.2171479
- (2006) Appl. Phys. Lett. , vol.88 , pp. 063501
- Goldmann, C.¹ Gundlach, D.J.² Batlogg, B.³

21
- 33644777817
- A. R. Reddy and M. Bendikov, Chem. Commun. 1179 (2006).
- (2006) Chem. Commun. , pp. 1179
- Reddy, A.R.¹ Bendikov, M.²

22
- 33645514270
- 10.1063/1.2001130
- O. D. Jurchescu, J. Bass, and T. T. M. Palstra, Appl. Phys. Lett. 87, 052102 (2005). 10.1063/1.2001130
- (2005) Appl. Phys. Lett. , vol.87 , pp. 052102
- Jurchescu, O.D.¹ Bass, J.² Palstra, T.T.M.³

23
- 0042338736
- 10.1103/PhysRevB.68.041202
- J. E. Northrup and M. L. Chabinyc, Phys. Rev. B 68, 041202 (2003). 10.1103/PhysRevB.68.041202
- (2003) Phys. Rev. B , vol.68 , pp. 041202
- Northrup, J.E.¹ Chabinyc, M.L.²

24
- 0042782752
- 10.1063/1.1604193
- Y. Qiu, Y. C. Hu, G. F. Dong, L. D. Wang, J. F. Xie, and Y. N. Ma, Appl. Phys. Lett. 83, 1644 (2003). 10.1063/1.1604193
- (2003) Appl. Phys. Lett. , vol.83 , pp. 1644
- Qiu, Y.¹ Hu, Y.C.² Dong, G.F.³ Wang, L.D.⁴ Xie, J.F.⁵ Ma, Y.N.⁶

25
- 24344488483
- 10.1063/1.1949281
- S. Ogawa, T. Naijo, Y. Kimura, H. Ishii, and M. Niwano, Appl. Phys. Lett. 86, 252104 (2005). 10.1063/1.1949281
- (2005) Appl. Phys. Lett. , vol.86 , pp. 252104
- Ogawa, S.¹ Naijo, T.² Kimura, Y.³ Ishii, H.⁴ Niwano, M.⁵

26
- 36248962599
- 10.1063/1.2813640
- S. D. Wang, T. Minari, T. Miyadera, K. Tsukagoshi, and Y. Aoyagi, Appl. Phys. Lett. 91, 203508 (2007). 10.1063/1.2813640
- (2007) Appl. Phys. Lett. , vol.91 , pp. 203508
- Wang, S.D.¹ Minari, T.² Miyadera, T.³ Tsukagoshi, K.⁴ Aoyagi, Y.⁵

27
- 0004005306
- Wiley Interscience, New York
- S. M. Sze, Physics of Semiconductor Devices (Wiley Interscience, New York, 1981).
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

28
- 70350339679
- 10.1002/adma.200901136
- H. Sirringhaus, Adv. Mater. 21, 3859 (2009). 10.1002/adma.200901136
- (2009) Adv. Mater. , vol.21 , pp. 3859
- Sirringhaus, H.¹

29
- 66249125983
- 10.1002/adma.200802430
- Y. L. Guo, C. A. Di, S. H. Ye, X. N. Sun, J. Zheng, Y. G. Wen, W. P. Wu, G. Yu, and Y. Q. Liu, Adv. Mater. 21, 1954 (2009). 10.1002/adma.200802430
- (2009) Adv. Mater. , vol.21 , pp. 1954
- Guo, Y.L.¹ Di, C.A.² Ye, S.H.³ Sun, X.N.⁴ Zheng, J.⁵ Wen, Y.G.⁶ Wu, W.P.⁷ Yu, G.⁸ Liu, Y.Q.⁹

30
- 84874094666
- See supplementary material at http://dx.doi.org/10.1063/1.4790186 E-APPLAB-102-024306 for morphology of nano-floating-gate, moisture effects of an OFET memory based on nano-floating-gate, and illumination responses in high vacuum and in air of an OFET memory based on nano-floating-gate.

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