Modulation of the electronic properties of ultrathin black phosphorus by strain and electrical field

Journal of Physical Chemistry C

Volumn 118, Issue 41, 2014, Pages 23970-23976

  Li, Yan ^a   Yang, Shengxue ^a   Li, Jingbo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BLACK PHOSPHORUS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; PHOSPHORUS;

CARRIER EFFECTIVE MASS; COMPRESSIVE STRAIN; ELECTRICAL FIELD; FIRST PRINCIPLES METHOD; HOLE EFFECTIVE MASS; SEMICONDUCTOR-TO-METAL TRANSITIONS; STRONG ANISOTROPY; STRUCTURAL AND ELECTRONIC PROPERTIES;

TENSILE STRAIN;

EID: 84908055378     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp506881v     Document Type: Article

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