Ultraviolet electroluminescence from n-ZnO/NiO/p-GaN light-emitting diode fabricated by MOCVD

Journal of Luminescence

Volumn 158, Issue , 2015, Pages 6-10

  Wang, Hui ^a   Zhao, Yang ^b   Wu, Chao ^b,c   Dong, Xin ^b   Zhang, Baolin ^b   Wu, Guoguang ^b   Ma, Yan ^b   Du, Guotong ^b  

^a HENAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b JILIN UNIVERSITY   (China)

^c ZHONGYUAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

MOCVD; NiO; UV LED; ZnO

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTROLUMINESCENCE; HETEROJUNCTIONS; LIGHT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; ZINC OXIDE;

CONDUCTION BAND OFFSET; ELECTROLUMINESCENCE SPECTRA; ELECTRON BLOCKING LAYER; HIGH-RESISTANCE STATE; NIO; ULTRAVIOLET ELECTROLUMINESCENCE; ULTRAVIOLET LIGHT-EMITTING DIODES; ZNO;

LIGHT EMITTING DIODES;

EID: 84907666223     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2014.09.007     Document Type: Article

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