Optical characterization of transparent nickel oxide films deposited by DC current reactive sputtering

Thin Solid Films

Volumn 519, Issue 17, 2011, Pages 5767-5770

  Karpinski, A ^a   Ouldhamadouche, N ^a   Ferrec, A ^a   Cattin, L ^a   Richard Plouet, M ^a   Brohan, L ^a   Djouadi, M A ^a   Jouan, P Y ^a  

^a UNIVERSITÉ DE NANTES   (France)

Author keywords

Electrical discharge characteristics; Nickel oxide (NiO); Reactive sputtering; Thin films; Transparent p type semiconductor

Indexed keywords

ELECTRIC DISCHARGES; ENERGY GAP; LIGHT ABSORPTION; MAGNETIC SEMICONDUCTORS; NICKEL OXIDE; OPTICAL FILMS; OXYGEN; REACTIVE SPUTTERING; SEMICONDUCTING FILMS; SEMICONDUCTING GLASS; THIN FILMS; ULTRAVIOLET VISIBLE SPECTROSCOPY;

ELECTRICAL DISCHARGES; NICKEL OXIDES (NIO); OPTICAL ABSORPTION COEFFICIENTS; OPTICAL CHARACTERIZATION; POLYCRYSTALLINE STRUCTURE; PREFERENTIAL ORIENTATION; REACTIVE MAGNETRON SPUTTERING; TRANSPARENT P-TYPE SEMICONDUCTOR;

OXIDE FILMS;

EID: 79957985812     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.12.203     Document Type: Conference Paper

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