InGaAs/InP DHBTs in a dry-etched refractory metal emitter process demonstrating simultaneous fτ/fmax ∼430/800GHz

IEEE Electron Device Letters

Volumn 32, Issue 1, 2011, Pages 24-26

  Jain, Vibhor ^a   Lobisser, Evan ^a   Baraskar, Ashish ^a   Thibeault, Brian J ^a   Rodwell, Mark J W ^a   Griffith, Z ^b   Urteaga, M ^b   Loubychev, D ^c   Snyder, A ^c   Wu, Y ^c   Fastenau, J M ^c   Liu, W K ^c  

^a Santa Barbara   (United States)

^b ROCKWELL SCIENTIFIC COMPANY   (United States)

^c IQE INC   (United States)

Author keywords

Heterojunction bipolar transistor (HBT); indium phosphide (InP)

Indexed keywords

COMMON-EMITTER CURRENT GAIN; CONTACT FORMATION; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; EMITTER-BASE JUNCTIONS; INGAAS/INP; INP; RF PERFORMANCE; WET-ETCH;

BIPOLAR TRANSISTORS; HETEROJUNCTIONS; INDIUM; INDIUM PHOSPHIDE; REFRACTORY MATERIALS; REFRACTORY METALS; SEMICONDUCTOR DEVICES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 78650920406     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2084069     Document Type: Conference Paper

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