Highly reliable submicron inp-based hbts with over 300-GHz ft

IEICE Transactions on Electronics

Volumn E91-C, Issue 7, 2008, Pages 1084-1090

  Kashio, Norihide ^a   Kurishima, Kenji ^a   Fukai, Yoshino K ^a   Yamahata, Shoji ^a  

^a NTT CORPORATION   (Japan)

Author keywords

InP HBTs; Passivation ledge; Reliability

Indexed keywords

ACTIVATION ENERGY; CURRENT DENSITY; PASSIVATION; RELIABILITY; TESTING;

ACCELERATED LIFE TESTS; COLLECTOR CURRENT DENSITY; DC MEASUREMENTS; HIGH RELIABILITY; INTERFACIAL QUALITIES; JUNCTION TEMPERATURES; MEAN TIME TO FAILURE; RECOMBINATION CURRENTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 63649141882     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e91-c.7.1084     Document Type: Article

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