Highly reliable InP-based HBTs with a ledge structure operating at high current density

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 90, Issue 4, 2007, Pages 1-8

  Fukai, Yoshino K ^a   Kurishima, Kenji ^a   Ida, Minoru ^a   Yamahata, Shoji ^a   Enoki, Takatomo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

High current density; High reliability; InP HBT; Ledge structure

Indexed keywords

ACTIVATION ENERGY; CURRENT DENSITY; EXTRAPOLATION; OPTICAL COMMUNICATION; RELIABILITY THEORY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES;

CURRENT GAIN DECREASES; LEDGE STRUCTURE; SURFACE RECOMBINATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 34247376509     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/ecjb.20320     Document Type: Article

References (11)

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