Ionic gated WSe2 FETs: Towards transparent Schottky barriers

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2014, Pages 129-130

  Prakash, Abhijith ^a   Das, Saptarshi ^a   Mehta, Ruchit ^a   Chen, Zhihong ^a   Appenzeller, Joerg ^a  

^a Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IONIC LIQUIDS; SEMICONDUCTING SILICON;

AMBIPOLAR CONDUCTION; CARRIER EFFECTIVE MASS; CARRIER INJECTION; CHANNEL MATERIALS; LOW POWER APPLICATION; SCHOTTKY BARRIERS; SEMICONDUCTING TRANSITION; TUNNELING CURRENT;

SCHOTTKY BARRIER DIODES;

EID: 84906545275     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2014.6872331     Document Type: Conference Paper

References (5)

1. Das, S. et al. Nano letters, 13, 100-105 (2013).
2. Das, S. et al. Applied Physics Letters, 103, 103501 (2013).
3. Das, S. et al. ACS Nano, 8, 1681-1689 (2014).
4. Perera, M. M. et al. ACS Nano, 7, 4449-4458 (2013).
5. Braga, D. et al. Nano Letters, 12, 5218-5223 (2012).