Oxidation behavior of silicon carbide at 1200°C in both air and water-vapor-rich environments

Corrosion Science

Volumn 88, Issue , 2014, Pages 416-422

  Park, Dong Jun ^a   Jung, Yang Il ^a   Kim, Hyun Gil ^a   Park, Jeong Yong ^a   Koo, Yang Hyun ^a  

^a Korea Atomic Energy Research Institute   (South Korea)

Author keywords

A. Ceramic; B. TEM; B. XPS; C. High temperature corrosion; C. Oxidation

Indexed keywords

AMORPHOUS SILICON; SILICON; SILICON CARBIDE;

A. CERAMIC; AMORPHOUS OXIDE LAYERS; AMORPHOUS SI; HIGH TEMPERATURE CORROSIONS; OXIDATION BEHAVIORS; OXIDATION CONDITIONS; OXIDATION ENVIRONMENT; TEST CONDITION;

OXIDATION;

EID: 84906784817     PISSN: 0010938X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.corsci.2014.07.052     Document Type: Article

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