Silicon carbide oxidation in steam up to 2 MPa

Journal of the American Ceramic Society

Volumn 97, Issue 8, 2014, Pages 2331-2352

  Terrani, Kurt A ^a   Pint, Bruce A ^a   Parish, Chad M ^a   Silva, Chinthaka M ^a   Snead, Lance L ^a   Katoh, Yutai ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLOW VELOCITY; INTERFACES (MATERIALS); MICROSTRUCTURE; OXIDATION; RATE CONSTANTS; SCALE (DEPOSITS); SILICATE MINERALS; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

ARRHENIUS DEPENDENCE; CHEMICAL VAPOR DEPOSITED; ENVIRONMENTAL PARAMETER; HIGH TEMPERATURE; OXIDATION BEHAVIORS; SIC/SIC COMPOSITES; STEAM PARTIAL PRESSURE; STRONG DEPENDENCES;

STEAM;

EID: 84906782315     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/jace.13094     Document Type: Article

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