Effects of high water-vapor pressure on oxidation of silicon carbide at 1200°C

Journal of the American Ceramic Society

Volumn 86, Issue 8, 2003, Pages 1249-1255

  Tortorelli, Peter F ^a   More, Karren L ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; CRYSTALLIZATION; MORPHOLOGY; OXIDATION; POROUS MATERIALS; SILICA; VAPOR PRESSURE; WATER;

CRISTOBALITE; ELEVATED WATER-VAPOR PRESSURE; GROWTH RATE; PARALINEAR KINETIC MODEL; SURFACE RECESSION; VOLATILITY;

SILICON CARBIDE;

EID: 0041428199     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2003.tb03460.x     Document Type: Article

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