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Volumn 348, Issue 1-2, 2003, Pages 47-53

Oxidation behaviors of C/SiC in the oxidizing environments containing water vapor

Author keywords

C SiC; Composites; CVD; Oxidation; SiC; Water vapor

Indexed keywords

ARGON; CARBON; OXIDATION; RATE CONSTANTS; VAPORS; WATER;

EID: 0037447648     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5093(02)00644-5     Document Type: Article
Times cited : (82)

References (33)
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  • 9
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    • Oxidaton warburton, of silicon and silicon carbide in gaseous atmospheres at 1000-1300°C
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    • J.E. Antill, J.R. Warburton, 'Oxidaton of Silicon and Silicon Carbide in Gaseous Atmospheres at 1000-1300°C'; in: Reactions Between Gases and Solids, NATO Advisory Group for Aerospace Research and Development Conference Proceedings No. 52 (Dayton, OH, October 1969), 1970, pp. 10-1-10-12.
    • (1970) Reactions Between Gases and Solids
    • Antill, J.E.1    Warburton, J.R.2
  • 13
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    • Paralinear oxidation of CVD SiC in water vapor
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    • (1997) Junior American Ceramic Society , vol.80 , Issue.1 , pp. 197-205
    • Opila, E.J.1
  • 27
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    • R. Ivanic, Vacuum 61 (2-4) (2001) 229-234.
    • (2001) Vacuum , vol.61 , Issue.2-4 , pp. 229-234
    • Ivanic, R.1
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    • T. Goto, Corrosion Sci. 44 (2) (2002) 359-370.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.