Surface-barrier p-CdTe-based photodiodes

Semiconductor Science and Technology

Volumn 14, Issue 4, 1999, Pages 373-377

  Kosyachenko, L A ^a   Sklyarchuk, V M ^a   Sklyarchuk, Ye F ^a   Ulyanitsky, K S ^a  

^a CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRON BEAMS; EVAPORATION; PHOTOELECTRICITY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

ELECTRON-BEAM EVAPORATION; PHOTOELECTRIC QUANTUM YIELD; SURFACE RECOMBINATION; X-RAY DETECTION EFFICIENCY;

PHOTODIODES;

EID: 0032630014     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/4/016     Document Type: Article

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