Electrical spin injection from ferromagnet into an InAs quantum well through a MgO tunnel barrier

Applied Physics Express

Volumn 7, Issue 7, 2014, Pages

  Ishikura, Tomotsugu ^a   Liefeith, Lenanrt Knud ^b   Cui, Zhixin ^a   Konishi, Keita ^a   Yoh, Kanji ^c   Uemura, Tetsuya ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

^b UNIVERSITY OF HAMBURG   (Germany)

^c Graduate School of Information Science and Technology Hokkaido University ^*

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

ELECTRICAL SPIN INJECTION; INAS QUANTUM WELL; JUNCTION RESISTANCES; NONLOCAL SPIN VALVES; ORDERS OF MAGNITUDE; SCHOTTKY JUNCTIONS; SPIN FIELD-EFFECT TRANSISTORS; TUNNELING BARRIER;

MAGNESIA;

EID: 84904706405     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.7.073001     Document Type: Article

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