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Volumn 378, Issue , 2013, Pages 511-514
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Fabrication and characterization of a δ-dope InAs/InP core shell nanowire transistor
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Author keywords
Field effect transistors; Low dimensional structures; Magnetic fields; Semiconducting III V materials
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Indexed keywords
FIELD EFFECT TRANSISTORS;
MAGNETIC FIELDS;
NANOWIRES;
SUBSTRATES;
TEMPERATURE;
COHERENCE LENGTHS;
CORE-SHELL NANOWIRES;
FABRICATION AND CHARACTERIZATIONS;
LOW DIMENSIONAL STRUCTURE;
QUASI-ONE-DIMENSIONAL MODEL;
SEMI CONDUCTING III-V MATERIALS;
WEAK ANTILOCALIZATION;
WEAK LOCALIZATION;
SHELLS (STRUCTURES);
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EID: 84885434699
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2012.12.076 Document Type: Article |
Times cited : (6)
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References (14)
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