Possible sign reversal of the Rashba coefficient in InAs-based heterostructures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 4, 2010, Pages 979-983

  Matsuda, Takashi ^a   Yoh, Kanji ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

EP2DS 18; ILP model; Rashba effect; Weak antilocalization

Indexed keywords

BAND DISCONTINUITIES; BAND GAP ENGINEERING; GATE VOLTAGES; HETEROSTRUCTURES; ILP MODELS; INAS; NEGATIVE GATE VOLTAGES; PEAK POSITION; RASHBA EFFECTS; SHUBNIKOV-DE HAAS OSCILLATIONS; SIGN REVERSAL; SIGN-CHANGE; WEAK ANTILOCALIZATION;

ELECTRON TRAPS; HETEROJUNCTIONS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS;

SHUBNIKOV-DE HAAS EFFECT;

EID: 76949105770     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.12.014     Document Type: Article

References (32)

1. Zutic I., Fabian J., and Das Sarma S. Rev. Mod. Phys. 76 (2004) 323
2. Datta S., and Das B. Appl. Phys. Lett. 56 (1990) 665
3. Rashba E.I. Sov. Phys. Solid State 2 (1960) 1109
4. Bychkov Y.A., and Rashba E.I. J. Phys. C: Solid State Phys. 17 (1984) 6039
5. Dresselhaus G. Phys. Rev. 100 (1955) 580
6. Pfeffer P., and Zawadzki W. Phys. Rev. B 52 (1995) R14332
7. Matsuda T., Yoh, and J. K. Electron. Mater. 37 (1806) 2008
8. de Andrada e Silva E.A., La Rocca G.C., and Bassani F. Phys. Rev. B 55 (1997) 16293
9. Koga T., Nitta J., Akazaki T., and Takayanagi H. Phys. Rev. Lett. 89 (2002) 046801
10. Andrei Bernevig B., Orenstein J., and Zhang S.-C. Phys. Rev. Lett. 97 (2006) 236601
11. Schliemann J., Carlos Egues J., and Loss D. Phys. Rev. Lett. 90 (2003) 146801
12. Winkler R. Phys. Rev. B 69 (2004) 045317
13. Schliemann J., and Loss D. Phys. Rev. B 68 (2003) 165311
14. Bernevig B.A., Oreustein J., and Zhang S.C. Phys. Rev. Lett. 93 (2006) 236601
15. Ohno M., and Yoh K. Phys. Rev. B 75 (2007) 241308R
16. Cartoixa X., Wang L.-W., Ting D.Z.-Y., and Chang Y.-C. Phys. Rev. B 73 (2006) 205341
17. Kato Y., Myers R.C., Gossard A.C., and Awschalom D.D. Nature 427 (2004) 50
18. Luo J., Munekata H., Fang F.F., and Stiles P.J. Phys. Rev. B 41 (1990) 7685
19. Zduniak A., Dyakonov M.I., and Knapp W. Phys. Rev. B 56 (1996) 1997
20. McPhail S., Yasin C.E., Hamilton A.R., Simmons M.Y., Linfield E.H., Pepper M., and Ritchie D.A. Phys. Rev. B 70 (2004) 245311
21. Grundler D. Phys. Rev. Lett. 84 (2000) 6074
22. Zhou W.Z., et al. Appl. Phys. Lett. 93 (2008) 262104
23. Gilbertson A.M., Branford W.R., Fearn M., Buckle L., Buckle P.D., Ashley T., and Cohen L.F. Phys. Rev. B 79 (2009) 235333
24. Knap W., et al. Phys. Rev. B 53 (1996) 3912
25. Iordanski S.V., Lyanda-Geller Yu.B., and Pikus G.E. Pis'ma Zh. Eksp. Teor. Fiz. 60 (1994) 199 [JETP Lett., 60 (1994) 206]
26. Hu C.-M., et al. Phys. Rev. B 60 (1999) 7736
27. de Andrada e Silva E.A., La Rocca G.C., and Bassani F. Phys. Rev. B 50 (1994) 8523
28. Carrier P., and Wei S.-H. Phys. Rev. B 70 (2004) 035212
29. Jancu J.-M., Scholz R., de Andrada e Silva E.A., and La Rocca G.C. Phys. Rev. B 72 (2005) 193201
30. Studenikin S.A., Coleridge P.T., Yu G., and Poole P.J. Semicond. Sci. Technol. 20 (2005) 1103
31. Krich J.J., and Halperin B.I. Phys. Rev. Lett. 98 (2007) 226802 and the references therein
32. Stotz J.A.H., et al. Physica E 32 (2006) 446