High-performance nonvolatile organic transistor memory devices using the electrets of semiconducting blends

ACS Applied Materials and Interfaces

Volumn 6, Issue 15, 2014, Pages 12780-12788

  Chiu, Yu Cheng ^a   Chen, Tzu Ying ^a   Chen, Yougen ^b   Satoh, Toshifumi ^b   Kakuchi, Toyoji ^b   Chen, Wen Chang ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

charge storage layer; donor acceptor; energy level; nonvolatile memory; polymer electret; transistor

Indexed keywords

ELECTRETS; ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); ORGANOMETALLICS; POLYACRYLATES; POLYETHERIMIDES; TRANSISTORS;

CHARGE-STORAGE LAYER; DONOR-ACCEPTORS; ELECTRET MATERIALS; N-TYPE SEMICONDUCTORS; NON-VOLATILE MEMORY; POLY(METHACRYLIC ACID); SEMICONDUCTING BLEND; WRITE-ONCE-READ-MANY;

FLASH MEMORY;

EID: 84906228008     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am502732d     Document Type: Article

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