Fullerene-derivative-embedded nanogap field-effect-transistor and its nonvolatile memory application

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Volumn 6, Issue 15, 2010, Pages 1617-1621

  Ryu, Seong Wan ^a   Kim, Chung Jin ^a   Kim, Sungho ^a   Seo, Myungsoo ^a   Yun, Changhun ^a   Yoo, Seunghyup ^a   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Capillary filling; Nanofluidics; Nanogap field effect transistor; Nonvolatile memory; PCBM

Indexed keywords

CAPILLARY CHANNELS; CAPILLARY FILLING; FIELD-EFFECT; MEMORY CELL; NANO SCALE; NANO-GAP; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION;

FILLING; NANOFLUIDICS;

FIELD EFFECT TRANSISTORS;

FULLERENE DERIVATIVE; NANOMATERIAL;

ARTICLE; CHEMISTRY; NANOTECHNOLOGY; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY; ULTRASTRUCTURE;

FULLERENES; MICROSCOPY, ELECTRON, TRANSMISSION; NANOSTRUCTURES; NANOTECHNOLOGY; TRANSISTORS, ELECTRONIC;

EID: 77955224059     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200902410     Document Type: Article

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